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Reliability Study of Au-In Transient Liquid Phase Bonding for SiC Power Semiconductor Devices

Published

Author(s)

Brian J. Grummel, Habib A. Mustain, Z. J. Shen, Allen R. Hefner Jr.

Abstract

Transient Liquid Phase (TLP) bonding is a promising technique for SiC and other wide-bandgap power semiconductor device die-attach and high temperature packaging. TLP bonding advances modern solder technology by raising the solder melting point to over 500 °C with a low 200 °C processing temperature that creates much greater mechanical reliability and rigidity while the thermal conductivity of the die-attach is increased by 67% and the thermal resistance reduced by an order of magnitude over the traditional Sn-Pb solders. It is also shown here that Au-In TLP bonds exude excellent electrical reliability with thermal cycling degradation if designed correctly as experimentally confirmed.
Proceedings Title
Power Semiconductor Devices & IC's (ISPSD), 2011 23nd International Symposium on
Conference Dates
May 23-26, 2011
Conference Location
San Diego, CA
Conference Title
2011 23nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Keywords

SiC, Silicon Carbide, Semiconductor, Power Semiconductors, WBG, Wide Bandgap, Power Electronics, Packaging, TLP, Transient Liquid Phase, Resistivity, EDX, SEM, Indium, Au-In, Reliability, Thermal Cycling

Citation

Grummel, B. , Mustain, H. , Shen, Z. and Hefner, A. (2011), Reliability Study of Au-In Transient Liquid Phase Bonding for SiC Power Semiconductor Devices, Power Semiconductor Devices & IC's (ISPSD), 2011 23nd International Symposium on, San Diego, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908130 (Accessed June 24, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created May 24, 2011, Updated February 19, 2017