Reliability Study of Au-In Transient Liquid Phase Bonding for SiC Power Semiconductor Devices
Brian J. Grummel, Habib A. Mustain, Z. J. Shen, Allen R. Hefner Jr.
Transient Liquid Phase (TLP) bonding is a promising technique for SiC and other wide-bandgap power semiconductor device die-attach and high temperature packaging. TLP bonding advances modern solder technology by raising the solder melting point to over 500 °C with a low 200 °C processing temperature that creates much greater mechanical reliability and rigidity while the thermal conductivity of the die-attach is increased by 67% and the thermal resistance reduced by an order of magnitude over the traditional Sn-Pb solders. It is also shown here that Au-In TLP bonds exude excellent electrical reliability with thermal cycling degradation if designed correctly as experimentally confirmed.
Power Semiconductor Devices & IC's (ISPSD), 2011 23nd International Symposium on
May 23-26, 2011
San Diego, CA
2011 23nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)
, Mustain, H.
, Shen, Z.
and Hefner, A.
Reliability Study of Au-In Transient Liquid Phase Bonding for SiC Power Semiconductor Devices, Power Semiconductor Devices & IC's (ISPSD), 2011 23nd International Symposium on, San Diego, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908130
(Accessed December 1, 2023)