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Comparison of Au-In Transient Liquid Phase Bonding Designs for SiC Power Semiconductor Device Packaging

Published

Author(s)

Brian J. Grummel, Z. J. Shen, Allen R. Hefner Jr.

Abstract

Transient liquid phase (TLP) bonding is an advanced die-attach technique for wide-bandgap power semiconductor and high-temperature packaging. TLP bonding advances current soldering techniques by raising the melting point to over 500 °C without detrimental high-lead materials. The bond also has greater reliability and rigidity due in part to a bonding temperature of 200 °C that drastically lowers the peak bond stresses. Furthermore, the thermal conductivity is increased 67 % while the bond thickness is substantially reduced, lowering the thermal resistance by an order of magnitude. This work provides an in-depth examination of the TLP fabrication methodology utilizing mechanical and thermal experimental characterization data along with thermal reliability results.
Proceedings Title
International Conference and Exhibition on High Temperature Electronics Network (HiTEN)
Conference Dates
July 17-18, 2011
Conference Location
Oxford
Conference Title
Proceedings of the International Conference and Exhibition on High Temperature Electronics Network (HiTEN)

Citation

Grummel, B. , Shen, Z. and Hefner, A. (2011), Comparison of Au-In Transient Liquid Phase Bonding Designs for SiC Power Semiconductor Device Packaging, International Conference and Exhibition on High Temperature Electronics Network (HiTEN), Oxford, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=909898 (Accessed May 28, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created July 18, 2011, Updated February 19, 2017