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Displaying 1751 - 1775 of 2189

SI Traceability of Force at the Nanonewton Level

January 1, 2001
Author(s)
David B. Newell, Jon R. Pratt, John A. Kramar, Douglas T. Smith, L Feeney, Edwin R. Williams
Although nanonewton force measurements are commonplace in industry, no National Measurement Institute supports a link to the International System of Units (SI) below one newton. The National Institute of Standards and Technology has launched a five-year

Stability Analysis of Interrupted Cutting With Finite Time in the Cut

January 1, 2001
Author(s)
P V. Bayly, J E. Halley, Matthew A. Davies, Jon R. Pratt
The stability of interrupted cutting is examined for the case in which the tool is in contact with the work piece for a small, but finite, fraction of the tooth-passing period. A model of a single degree-of-freedom tool excited by intermittent

Strengths and Limitations of Surface Texture Characterization Techniques

January 1, 2001
Author(s)
Theodore V. Vorburger
Surface finish is important to the function of a wide range of industrial components including highways, ship hulls and propellers, mechanical parts, semiconductors, and optics. Hence, many documentary standards have been developed for specifying surface

Ultrastable Laser Array at 633 nm for Real-Time Dimensional Metrology

January 1, 2001
Author(s)
Y Lecoq, J Pedulla, John Lawall
We describe a laser system for very high-accuracy dimensional metrology. A sealed-cavity helium-neon laser is offset-locked to an iodine-stabilized laser in order to realize a secondary standard with higher power and less phase noise. Synchronous averaging

NIST/SEMATECH Collaboration: Application of Nano-Tips to Production CD-SEMs

November 15, 2000
Author(s)
Andras Vladar, Michael T. Postek
This work documents the first part of a two-part study about the application of nano-tips to critical dimension (CD) scanning electron microscopes used in integrated circuit production. Nano-tips, by comparison to all conventional cold, thermally assisted

Calibration of High-Resolution X-Ray Tomography with Atomic Force Microscopy

November 1, 2000
Author(s)
A Kalukin, B Winn, Yong Wang, C Jacobsen, Z Levine, Joseph Fu
For two-dimensional x-ray imaging of thin films, the technique of scanning transmission x-ray microscopy (STXM) has achieved images with feature sizes as small as 40 nm in recent years. However, calibration of three-dimensional tomographic images that are

Development of NIST Standard Bullets and Casings Status Report

November 1, 2000
Author(s)
Jun-Feng Song, Theodore V. Vorburger, Alim A. Fatah
In April 1998, two prototype standard bullets were developed at the National Institute of Standards and Technology (NIST). In October 1999, prototype standard casings were also developed at NIST. The standard bullets and casings are intended for use in

Introduction to ISO 10303 - The STEP Standard for Product Data Exchange

November 1, 2000
Author(s)
Mike Pratt
Since 1984 the International Organization for Standardization (ISO) has been working on the development of a comprehensive standard for the electronic exchange of product data between computer-based product life-cycle systems. Initial concentration has

Dimensional Metrology of Millimeter- and Sub-millimeter-scale Components

October 1, 2000
Author(s)
Theodore V. Vorburger, Jun-Feng Song, Joseph Fu, M Tundermann, Thomas Brian Renegar, Theodore D. Doiron, N G. Orji
Decreasing sizes and tolerances of engineering components bring a demand for decreasing uncertainty in the dimensional measurements of these parts. Hence there is increasing need for measuring machines capable of performing dimensional and geometrical

Form Error and Hardness Performance of Rockwell Diamond Indenters

September 1, 2000
Author(s)
Jun-Feng Song, Samuel R. Low III, Li Ma
The influences of form errors on hardness performance of Rockwell diamond indenter are discussed. Experimental results are introduced. The Finite Element Analysis (FEA) method is used to simulate the hardness measurement process. The effect of tip radii

Capability in Rockwell C Scale Hardness

July 1, 2000
Author(s)
Walter S. Liggett Jr, Samuel Low, David J. Pitchure, Jun-Feng Song
A measurement system is capable if it produces measurements with uncertainties small enough for demonstration of compliance with product specifications. To establish the capability of a system for Rockwell C scale hardness, one must assess measurement

Proposed Bullet Signature Comparisons Using Autocorrelation Functions

July 1, 2000
Author(s)
Jun-Feng Song, Theodore V. Vorburger
The National Institute of Standards and Technology (NIST) standard bullets and casings are intended as reference standards for crime laboratories to help verify that the computerized optical-imaging equipment in those laboratories is operating properly

Structural Information Mapping with Express-X

July 1, 2000
Author(s)
D B. Sanderson, Peter O. Denno
This paper provides an overview of the Express-X language, a language that provides structural information mapping of information modeled in EXPRESS schema. The paper presents the design rationale for Express-X. The paper also serves as a tutorial in

Accurate Dimensional Metrology With Atomic Force Microscopy

June 1, 2000
Author(s)
Ronald G. Dixson, R Koning, Joseph Fu, Theodore V. Vorburger, Thomas B. Renegar
Atomic force microscopes (AFMs) generate three dimensional images with nanometer level resolution and, consequently, are used in the semiconductor industry as tools for sub-micrometer dimensional metrology. Measurements commonly performed with AFMs are

Analysis of Module Interaction in an OMAC Controller

June 1, 2000
Author(s)
John L. Michaloski
Machine controllers built from standardized software parts, commonly referred to as components or modules, have the greatest potential to reap open architecture benefits - including plug-and-play, reusability and extensibility. Modularity is the key to

Is a Production Level Scanning Electron Microscope Linewidth Standard Possible?

June 1, 2000
Author(s)
Michael T. Postek, Andras Vladar, John S. Villarrubia
Metrology will remain a pricipal enabler for the development and manufacture of future generations of semiconductor devices. With the potential of 130 nm and 100 nm linewidths and high aspect ratio structures, the scanning electron microscope (SEM) remains

Is a Production-Level Scanning Electron Microscope Linewidth Standard Possible?

June 1, 2000
Author(s)
Michael T. Postek, Andras Vladar, John S. Villarrubia
Metrology will remain a principal enabler for the development and manufacture of future generations of semiconductor devices. With the potential of 130 and l00-nanometer linewidths and high aspect ratio structures, the scanning electron microscope (SEM)
Displaying 1751 - 1775 of 2189
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