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NIST Authors in Bold

Displaying 1451 - 1475 of 2189

Correlation of Topography Measurements of NIST SRM 2460 Standard Bullets by Four Techniques

January 1, 2006
Author(s)
Jun-Feng Song, Theodore V. Vorburger, Thomas Brian Renegar, Xiaoyu Alan Zheng, Hyug-Gyo Rhee, John M. Libert, Li Ma, K Bogart, Susan M. Ballou, B Bachrach
Three optical instruments including an interferometric microscope, a Nipkow disk confocal microscope and a laser scanning confocal microscope are used for the measurements of bullet profile signatures of a National Institute of Standards and Technology

Enhanced Capabilities of the NIST Fiber Probe for Microfeature Metrology

January 1, 2006
Author(s)
Bala Muralikrishnan, Jack A. Stone Jr., John R. Stoup
We have previously reported work in the area of fiber probe development at NIST for micro feature measurement. This probe, which we refer to as the Fiber Deflection Probe, functions by optically imaging the stem from two orthogonal directions a few

Fiber Deflection Probe for Small Hole Metrology

January 1, 2006
Author(s)
Balasubramanian Muralikrishnan, Jack A. Stone Jr., John R. Stoup
This paper presents the development of a new probing method for Coordinate Measuring Machines (CMM) to inspect diameter and form of small holes. The technique, referred to as fiber deflection probing, can be used for holes of approximately 100 mm nominal

Fiber Deflection Probe Uncertainty Analysis for Micro Holes

January 1, 2006
Author(s)
Bala Muralikrishnan, Jack A. Stone Jr., John R. Stoup
We have recently reported on a new probe, the Fiber Deflection Probe (FDP), for diameter and form measurement of large aspect ratio micro-holes (100 um nominal diameter, 5 mm deep). In this paper, we briefly review the measurement principle of the FDP

International Comparison of Surface Roughness and Step Height (Depth) Standards, SIM 4.8

January 1, 2006
Author(s)
K Doytchinov, F Kornblit, C C. Castellanos, J C. Oliveira, Thomas Brian Renegar, Theodore V. Vorburger
Calibration services of 5 countries from the SIM region are compared through measurements of surface roughness and step height standards. A surface roughness standard with a nominal Ra value of 0.2 mm, a surface roughness standard with a nominal Ra value

Large-Scale Metrology Instrument Performance Evaluations at NIST

January 1, 2006
Author(s)
William T. Estler, Daniel S. Sawyer, Bruce R. Borchardt, Steven D. Phillips
The ASME B89 Committee on Dimensional Metrology has approved a new American National Standard B89.4.19 - Performance Evaluation of Laser Based Spherical Coordinate Measurement Systems. This Standard, to be published in 2006, specifies test methods for

Nano- and Atomic-Scale Length Metrology

January 1, 2006
Author(s)
Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, Ndubuisi George Orji, Shaw C. Feng, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Wei Chu
We discuss nano-scale length metrology of linewidth, step height, and line edge roughness (LER). These properties are of growing importance to the function and specification of semiconductor devices as the dimensions of semiconductor devices shrink to the

Nano-Tip Electron Gun for the Scanning Electron Microscope

January 1, 2006
Author(s)
Andras Vladar, Zsolt Radi, Michael T. Postek, David C. Joy
Through this study the most important questions and problems associated with nano-tips and their possible applications to SEMs were investigated. These were related to the tip making procedures, the theoretical assessment of the Hitachi S-6000 critical

NIST Accomplishments in Nanotechnology

January 1, 2006
Author(s)
Michael T. Postek, Joseph J. Kopanski, David A. Wollman
This document includes a list of selected NIST accomplishments in nanotechnology for the period of fiscal years 2004 and 2005. These accomplishments are grouped into the NNI s Program Component Areas (PCAs), which are defined in the text. The NNI has

Relaxation Effects in Small Critical Nozzles

January 1, 2006
Author(s)
Aaron N. Johnson, C L. Merkle, Michael R. Moldover, John D. Wright
We computed the flow of four gases (He, N 2, CO 2, and SF 6) through a critical nozzle by augmenting traditional computational fluid dynamics (CFD) with a rate equation that accounts for τ relax, a species-dependent relaxation time that characterizes the

Topography Measurements and Applications

January 1, 2006
Author(s)
Jun-Feng Song, Theodore V. Vorburger
Based on auto- and cross-correlation functions (ACF and CCF), a new surface parameter called profile (or topography) difference, Ds, has been developed for quantifying differences between 2D profiles or between 3D topographies with a single number. When Ds

Three-dimensional Scanning Optical Tweezers

December 5, 2005
Author(s)
Thomas W. LeBrun, T W. Hwang, I Y. Park, Jun-Feng Song, Yong-Gu Lee, Nicholas G. Dagalakis, Cedric V. Gagnon, Arvind K. Balijepalli
There are several new tools for manipulating microscopic objects. Among them, optical tweezers (OT) has two distinguishing advantages. Firstly, OT can easily release an object without the need of a complicated detaching scheme. Secondly, it is anticipated

Analysis and Design of Parallel Mechanisms with Flexure Joints

December 1, 2005
Author(s)
Byoung H. Kang, J Wen, Nicholas Dagalakis, Jason J. Gorman
Flexure joints are frequently used in precision-motion stages and microrobotic mechanisms due to their monolithic construction. The joint compliance, however, can affect the static and dynamic performance of the overall mechanism. In this paper, we

Advanced Metrology Needs for Nanotechnology and Nanomanufacturing

November 1, 2005
Author(s)
Michael T. Postek, John S. Villarrubia, Andras Vladar
Advances in fundamental nanoscience, design of nanomaterials, and ultimately manufacturing of nanometer scale products all depend to some degree on the capability to accurately and reproducibly measure dimensions, properties, and performance

Scanning electron microscope dimensional metrology using a model-based library

November 1, 2005
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are smaller

A Benefit/Cost Model for Metrology in Manufacturing

October 24, 2005
Author(s)
James E. Potzick
Every measurement of a feature's size or placement on a wafer or photomask is made for a reason. Usually a measurement leads to a decision, often involving a process adjustment or business transaction, and there are costs and benefits attached to these

The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calib Standards With a Calibrated AFM at NIST

September 29, 2005
Author(s)
V W. Tsai, Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, R Koning, Richard M. Silver, Edwin R. Williams
Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lattice

Nanometer Resolution Metrology with the NIST Molecular Measuring Machine

September 23, 2005
Author(s)
John A. Kramar
Nanometre accuracy and resolution metrology over technically relevant areas is becoming a necessity for the progress of nanomanufacturing. At the National Institute of Standards and Technology, we are developing the Molecular Measuring Machine, a scanned

A Modular System Architecture for Agile Assembly of Nanocomponents using Optical Tweezers

September 10, 2005
Author(s)
Arvind K. Balijepalli, Thomas W. LeBrun, Cedric V. Gagnon, Yong-Gu Lee, Nicholas G. Dagalakis
In order to realize the flexibility optical trapping offers as a nanoassembly tool, we need to develop natural and intuitiveinterfaces to assemble large quantities of nanocomponents quickly and cheaply. We propose a system to create such aninterface that

Issues in Line Edge and Linewidth Roughness Metrology

September 9, 2005
Author(s)
John S. Villarrubia
In semiconductor electronics applications, line edge and linewidth roughness are generally measured using a root mean square (RMS) metric. The true value of RMS roughness depends upon the length of edge or line that is measured and the chosen sampling
Displaying 1451 - 1475 of 2189
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