U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 76 - 100 of 1312

Demonstration of Superconducting Optoelectronic Single-Photon Synapses

October 6, 2022
Author(s)
Saeed Khan, Bryce Primavera, Jeff Chiles, Adam McCaughan, Sonia Buckley, Alexander Tait, Adriana Lita, John Biesecker, Anna Fox, David Olaya, Richard Mirin, Sae Woo Nam, Jeff Shainline
Superconducting optoelectronic hardware is being explored as a path towards artificial spiking neural networks with unprecedented scales of complexity and computational ability. Such hardware combines integrated-photonic components for few-photon, light

Towards the Physical Reliability of 3D-Integrated Systems: Broadband Dielectric Spectroscopic (BDS) Studies of Material Evolution and Reliability in Integrated Systems

September 30, 2022
Author(s)
Papa Amoah, Joseph J. Kopanski, Yaw S. Obeng, Christopher Sunday, Chukwudi Okoro, Lin You, Dmirty Veksler
In this paper, we present an overview of our current research focus in developing non-destructive metrology for monitoring reliability issues in 3D-integrated electronic systems. We introduce a suite of non-destructive metrologies that can serve as early

Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress

September 16, 2022
Author(s)
Elisabeth Mansfield, David Goggin, Jason Killgore, Taylor Aubry
Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for longevity and effectiveness of these devices. In this study, CVD

Cryogenic Decade-Passband Superconducting Integrated Diplexer

August 29, 2022
Author(s)
Akim Babenko, GREGOR LASSER, Nathan Flowers-Jacobs, Justus Brevik, Anna Fox, ZOYA POPOVIC, Paul Dresselhaus
We demonstrate a decade-passband superconducting diplexer operating from dc to 27 GHz, integrated in a niobium, Josephson-junction(JJ)-compatible process. Both low- and high-pass branches are singly-terminated 5-pole Butter-worth filters with a 2.5 GHz

RF Josephson Arbitrary Waveform Synthesizer with Integrated Superconducting Diplexers

August 24, 2022
Author(s)
Akim Babenko, Nathan Flowers-Jacobs, GREGOR LASSER, Justus Brevik, Anna Fox, Paul Dresselhaus, Zoya Popovic, Samuel P. Benz
We present the design, fabrication and characterization of a broadband RF Josephson Arbitrary Waveform Synthesizer (RF-JAWS) with a series array of 4500 Josephson junctions (JJs) and integrated low-pass/high-pass five-pole superconducting diplexers. The

How to Report and Benchmark Emerging Field-Effect Transistors

July 29, 2022
Author(s)
Zhihui Cheng, Chin-Sheng Pan, Peiqi Wang, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven Koester, Eric Pop, Aaron Franklin, Curt A. Richter
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

July 18, 2022
Author(s)
Jonathan Goodwill, Nitin Prasad, Brian Hoskins, Matthew Daniels, Advait Madhavan, Lei Wan, Tiffany Santos, Michael Tran, Jordan Katine, Patrick Braganca, Mark Stiles, Jabez J. McClelland
The increasing scale of neural networks and their growing application space have produced a demand for more energy and memory efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in

Gate resistance thermometry: An electrical thermal characterization technique

July 15, 2022
Author(s)
Georges Pavlidis, Brian Foley, Samuel Graham
Gate Resistance Thermometry (GRT) is a potential reliable technique to determine the average temperature of the gate metal in GaN transistors. In contrast to other electrical techniques that average the temperature across different areas of the active

The Expanding Role of National Metrology Institutes in the Quantum Era

July 12, 2022
Author(s)
Alexander Tzalenchuk, Nicolas Spethmann, Tim Prior, Jay H. Hendricks, Yijie Pan, Vladimir Bubanja, Guilherme Temporao, Dai-Hyuk Yu, Damir Ilic, Barbara L. Goldstein
Now that all base units are defined in terms of fundamental constants and can thus — at least in principle — be realized anytime and anywhere, rather than through a measurement chain leading back to unique physical artefacts, who holds the traceability

A 110 GHz Comb Generator in a 250 nm InP HBT Technology

April 18, 2022
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Paul D. Hale, Rob Jones, Ari Feldman
We report a monolithic microwave integrated-circuit (MMIC) comb generator capable of producing a repetitive narrow pulse (7.1 ps pulse duration) with sharp edges (4.2 ps falling time). The circuit is designed in a 250 nm Indium Phosphide (InP)

2022 Spring/Summer ARFTG Microwave Measurement Conference

April 4, 2022
Author(s)
Jon Martens, Andrej Rumiantsev, Marco De Spirito, Jeffrey Jargon
The Automatic RF Techniques Group (ARFTG) is a technical organization interested in all aspects of RF and microwave test and measurement. Originally created as a users' forum focused on the calibration and automation of early vector network analyzers

Recent Advances in Weyl Semimetal ( MnBi2Se4) and Axion Insulator (MnBi2Te4)

March 25, 2022
Author(s)
Sugata Chowdhury, Kevin Garrity, Francesca Tavazza
Extensive research is currently focused on 2D and 3D magnetic topological insulators (MTIs), as their many novel properties make them excellent candidates for applications in spintronics and quantum computing. Practical MTIs requires a combination of

Influence of Dimensionality on the Charge Density Wave Phase of 2H-TaSe2

March 23, 2022
Author(s)
Sugata Chowdhury, Albert Rigosi, Heather Hill, David B. Newell, Angela R. Hight Walker, Francesca Tavazza, Andrew Briggs
Metallic transition metal dichalcogenides like tantalum diselenide (TaSe2) exhibit exciting behaviors at low temperatures including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is used to classify the
Displaying 76 - 100 of 1312
Was this page helpful?