Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress

Published

September 16, 2022

Author(s)

Elisabeth Mansfield, David Goggin, Jason Killgore, Taylor Aubry

Abstract

Devices containing transition metal dichalcogenides are being investigated for next generation electronics. Understanding material properties under typical use conditions is important for longevity and effectiveness of these devices. In this study, CVD-grown MoS2 crystals with pre-existing defects from the growth process were subjected to DC-voltages of 10 V, 20 V, and 40 V for up to 96 h. The presence of pre-existing defects was found to lead to more extensive material damage that scales with voltage and time. SEM, AFM, Raman and photoluminescence imaging indicate regions of increased defect concentration post-electrical stress.

Citation

MRS Communications

Pub Type

Journals

Download Paper

https://doi.org/10.1557/s43579-022-00261-x

Local Download

Keywords

2D materials, materials reliability, microelectronics

Citation

Mansfield, E. , Goggin, D. , Killgore, J. and Aubry, T. (2022), Degradation of CVD-Grown MoS2 Subjected to DC Electrical Stress, MRS Communications, [online], https://doi.org/10.1557/s43579-022-00261-x, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=935122 (Accessed October 13, 2025)