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Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H–SiC

Published

Author(s)

James Ashton, Brian Manning, Stephen Moxim, Fedor Sharov, Patrick Lenahan, Jason Ryan

Abstract

Electrically detected magnetic resonance (EDMR) measurements have been extended to sub-mT measurements through utilization of frequency sweeping of the oscillating magnetic field, where conventional electron paramagnetic resonance-based measurements traditionally utilize magnetic field sweeping. In spin-dependent transport measurements in devices, an oftentimes pervasive near-zero field magnetoresistance effect overwhelms the sub-mT regime. This magnetoresistance effect is independent of RF drive. Thus, by utilizing a constant DC field and a frequency sweep of the RF field, the magnetoresistance effect is not detected, leaving only the EDMR response. Interesting EDMR-based phenomena emerge at sub-mT fields when the oscillating field magnitude approaches the static field, such as multiple-photon transitions caused by the emergence of Floquet spin states and Bloch-Siegert shifts. A spectral-narrowing effect also emerges as the static field is reduced. In this work, we show that the narrowing of the frequency-swept EDMR response with static field can be modeled by changes in intermediate spin pair relaxation through modulation of hyperfine fields caused by stochastic perturbations from the environment. We utilize recently developed theory to model the relaxation of spin pairs and show that stochastic interactions of the electron spin with the environment yield both Floquet spin states and changes in intermediate spin pair relaxation.
Citation
Applied Physics Letters
Volume
120
Issue
6

Keywords

EDMR, Frequency Sweep, Relaxation, 4H-SiC

Citation

Ashton, J. , Manning, B. , Moxim, S. , Sharov, F. , Lenahan, P. and Ryan, J. (2022), Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H–SiC, Applied Physics Letters, [online], https://doi.org/10.1063/5.0084378, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=934005 (Accessed March 28, 2024)
Created February 7, 2022, Updated November 29, 2022