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How to Report and Benchmark Emerging Field-Effect Transistors

Published

Author(s)

Zhihui Cheng, Chin-Sheng Pan, Peiqi Wang, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven Koester, Eric Pop, Aaron Franklin, Curt A. Richter

Abstract

Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field as a whole to progress more consistently and meaningfully.
Citation
Nature Electronics
Volume
5
Issue
7

Keywords

Benchmarking, Field Effect Transistors, emerging electronics, 2D materials

Citation

Cheng, Z. , Pan, C. , Wang, P. , Wu, Y. , Shahrjerdi, D. , Radu, I. , Lemme, M. , Peng, L. , Duan, X. , Chen, Z. , Appenzeller, J. , Koester, S. , Pop, E. , Franklin, A. and Richter, C. (2022), How to Report and Benchmark Emerging Field-Effect Transistors, Nature Electronics, [online], https://doi.org/10.1038/s41928-022-00798-8, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=933042 (Accessed August 8, 2022)
Created July 29, 2022, Updated August 1, 2022