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How to Report and Benchmark Emerging Field-Effect Transistors



Zhihui Cheng, Chin-Sheng Pan, Peiqi Wang, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven Koester, Eric Pop, Aaron Franklin, Curt A. Richter


Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field as a whole to progress more consistently and meaningfully.
Nature Electronics


Benchmarking, Field Effect Transistors, emerging electronics, 2D materials


Cheng, Z. , Pan, C. , Wang, P. , Wu, Y. , Shahrjerdi, D. , Radu, I. , Lemme, M. , Peng, L. , Duan, X. , Chen, Z. , Appenzeller, J. , Koester, S. , Pop, E. , Franklin, A. and Richter, C. (2022), How to Report and Benchmark Emerging Field-Effect Transistors, Nature Electronics, [online],, (Accessed May 27, 2024)


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Created July 29, 2022, Updated November 29, 2022