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Displaying 576 - 600 of 1322

Changes in Electronic Structure of the Electrochemically Li-Ion Deintercalated LiNiO 2 System Investigated by Soft X-Ray Absorption Spectroscopy

December 7, 2006
Author(s)
W S. Yoon, Kyung Y. Chung, James McBreen, Daniel A. Fischer, Xiao-Qing Yang
The electronic structures of Li1-xNiO2 system after electrochemically delithiated to various x values have been investigated using soft X-ray absorption spectroscopy (XAS) for oxygen K-edge and Ni LII,III-edge. By comparing the O K-edge XAS spectra of Li1

High Temperature Superconductor Wires and Tapes

November 26, 2006
Author(s)
M. P. Paranthaman, V Selvamanickam, K Matsumoto, Luigia Gianna, Wei-xian Zhang, P Goyal, Winnie Wong-Ng
High Temperature Superconductor Wires and Tapes was one of the MS&T2006 symposia (October 15-19, 2006; Duke Energy Center, Cincinnati, Ohio) that covered recent advances in the area of high temperature superconductor (HTS) wires and tapes. The symposium

The Influence of NH 3 Anneal on the Crystallization Kinetics of HfO 2 Gate Dielectric Films

November 17, 2006
Author(s)
Patrick S. Lysaght, Joseph Woicik, Brendan Foran, Joel Barnett, Gennadi Bersuker, B H. Lee
HfO2 gate dielectric thin films have been exposed to anneal processing in NH3 and N2 ambient in order to decouple the influence of N incorporation from that of the thermal cycle alone. We report on the effectiveness of NH3 processing to introduce N into

Role of Indenter Material and Size in Veneer Failure of Brittle Layer Structures

October 24, 2006
Author(s)
Sanjit Bhowmick, Juan J. Melendez-Martinez, Ilja Hermann, Yu Zhang, Brian R. Lawn
The roles of indenter material and size in the failure of brittle veneer layers in all-ceramic crown-like structures are studied. Glass veneer layers 1 mm thick bonded to alumina layers 0.5 mm thick on polycarbonate bases (representative of porcelain

Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO 2 for the Advanced Gate Stack

October 2, 2006
Author(s)
Kao-Shuo Chang, Martin L. Green, John S. Suehle, Eric M. Vogel, Hao Xiong, Jason Hattrick-Simpers, Ichiro Takeuchi, O Famodu, K Ohnaka, T Chikyow, Prashant Majhi, B H. Lee, M Gardner
We have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (DVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS)
Displaying 576 - 600 of 1322
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