Lisiansky, M.
, Heiman, A.
, Kovler, M.
, Fenigstein, A.
, Roizin, Y.
, Gladkikh, A.
, Iksman, M.
, Edrei, R.
, Hofman, A.
, Shnieder, Y.
and Claasen, T.
(2006),
SiO2/Si3N4/Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=854203
(Accessed October 14, 2024)
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SiO2/Si3N4/Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing
Published
Author(s)
M Lisiansky, A Heiman, M Kovler, A Fenigstein, Y Roizin, A Gladkikh, M Iksman, R Edrei, A A. Hofman, Y Shnieder, T Claasen
Citation
Applied Physics Letters
Volume
89
Issue
15
Pub Type
Journals
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If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created October 9, 2006, Updated February 19, 2017