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SiO2/Si3N4/Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing

Published

Author(s)

M Lisiansky, A Heiman, M Kovler, A Fenigstein, Y Roizin, A Gladkikh, M Iksman, R Edrei, A A. Hofman, Y Shnieder, T Claasen
Citation
Applied Physics Letters
Volume
89
Issue
15

Citation

Lisiansky, M. , Heiman, A. , Kovler, M. , Fenigstein, A. , Roizin, Y. , Gladkikh, A. , Iksman, M. , Edrei, R. , Hofman, A. , Shnieder, Y. and Claasen, T. (2006), SiO2/Si3N4/Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=854203 (Accessed May 29, 2024)

Issues

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Created October 9, 2006, Updated February 19, 2017