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The Influence of NH3 Anneal on the Crystallization Kinetics of HfO2 Gate Dielectric Films

Published

Author(s)

Patrick S. Lysaght, Joseph Woicik, Brendan Foran, Joel Barnett, Gennadi Bersuker, B H. Lee

Abstract

HfO2 gate dielectric thin films have been exposed to anneal processing in NH3 and N2 ambient in order to decouple the influence of N incorporation from that of the thermal cycle alone. We report on the effectiveness of NH3 processing to introduce N into the dielectric film system and characterize the local coordination and crystallization kinetics that give rise to the resultant high-k film microstructure as determined from a variety of high resolution spectroscopic and imaging analysis techniques.
Proceedings Title
ECS Conference | 208th | 2006 |
Conference Dates
October 16-21, 2006
Conference Location
Undefined
Conference Title
ECS Conference

Keywords

HfO2 gate dielectric films, N incorporation, NH3 thermal processing

Citation

Lysaght, P. , Woicik, J. , Foran, B. , Barnett, J. , Bersuker, G. and Lee, B. (2006), The Influence of NH<sub>3</sub> Anneal on the Crystallization Kinetics of HfO<sub>2</sub> Gate Dielectric Films, ECS Conference | 208th | 2006 |, Undefined (Accessed April 18, 2024)
Created November 16, 2006, Updated October 12, 2021