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Displaying 48326 - 48350 of 143806

Diffusion in Single Solid Supported Lipid Bilayers Studied by Quasi-Elastic Neutron Scattering

October 1, 2010
Author(s)
Clare L. Armstrong, Martin D. Kaye, Michaela Zamponi, E. Mamontov, Madhu Sudan Tyagi, Timothy Jenkins, Maikel C. Rheinstadter
It seems to be increasingly accepted that the diversity and composition of lipids play an important role in the function of biological membranes. A prime example of this are lipid rafts; regions enriched with certain types of lipids which are speculated to

Effect of Phase Change and Solute Diffusion on Spreading on a Dissolving Substrate

October 1, 2010
Author(s)
Walter Villanueva, William J. Boettinger, James A. Warren, Gustav Amberg
Dissolutive wetting is investigated numerically using a diffuse-interface model that incorporates fluid flow, solute diffusion, and phase change. A range of materials parameters are investigated that: 1) permits recovery of the hydrodynamic limit by

Fire Effluent Component Yields from Room-scale Fire Tests

October 1, 2010
Author(s)
Richard G. Gann, Jason D. Averill, Erik L. Johnsson, Marc R. Nyden, Richard D. Peacock
Estimation of the time available for escape (ASET) in the event of a fire is a principal component in fire hazard or risk assessment. Valid data on the yields of toxic smoke components from bench-scale apparatus is essential to accurate ASET calculations

Future SC4 Architecture PWI - Report and Technical Discussion

October 1, 2010
Author(s)
Allison Barnard Feeney
This document is the report of the Future SC4 architecture PWI. It provides information about the draft “Industrial Data Integrated Ontologies and Models (IDIOM) architecture specification” created by the PWI. The work of the Preliminary Work Item (PWI)

Intercomparison of Methods for Detecting and Characterizing Voids in Bonded Wafer Pairs

October 1, 2010
Author(s)
Richard A. Allen, Andrew C. Rudack, David T. Read, Winthrop A. Baylies
The Wafer Bond Task Force of the SEMI MEMS Standards Committee has begun a round robin experiment to evaluate methods for identifying and characterizing voids in bonded wafer pairs for three-dimensional integrated circuit (3D IC) applications. Due to the

Nano- and Atom-scale Length Metrology

October 1, 2010
Author(s)
Theodore V. Vorburger, Ronald G. Dixson, Ndubuisi G. Orji, Joseph Fu, Richard A. Allen, Michael W. Cresswell, Vincent A. Hackley
Measurements of length at the nano-scale have increasing importance in manufacturing, especially in the electronics and biomedical industries. The properties of linewidth and step height are critical to the function and specification of semiconductor

Thermal Noise and Noise Measurements a 2010 Update

October 1, 2010
Author(s)
Anthony R. Kerr, James P. Randa
1. Introduction 2. Noise Temperature as a Measure of Noise Power 3. Available Noise Power from a Resistor 4. The Zero-Point Noise Term and the Minimum Noise of an Amplifier 5. Noise-Temperature Standards and Measurement of One-Port Noise Sources 6
Displaying 48326 - 48350 of 143806
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