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Domain Wall Traps for Low-Field Switching of Submicron Elements



Robert D. McMichael, J G. Eicke, Michael J. Donahue, Donald G. Porter


In magnetic random access memory, power consumption depends on the coercivity of the magnetic elements in the memory cells. In this article a new method is described that uses a domain wall trap element shape to reduce both the coercivity and the dependence of coercivity on elemkent size in submicron magnetic elements. Micromagnetic simulations of a shaped permalloy element show coercivity less than one tenth the coercivity calculated for a rectangular permalloy element of the same size. The switching times for the domain wall traps are shown to be comparable to those of rectangular elements.
Journal of Applied Physics


coercivity, domain wall trap, magnetic random access memory (MRAM), memory cells permalloy element


McMichael, R. , Eicke, J. , Donahue, M. and Porter, D. (2000), Domain Wall Traps for Low-Field Switching of Submicron Elements, Journal of Applied Physics (Accessed April 20, 2024)
Created May 1, 2000, Updated February 17, 2017