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Electron Injection, Recombination and Halide Oxidation Dynamics at Dye-Sensitized Metal Oxide Interfaces

Published

Author(s)

T Heimer, Edwin J. Heilweil, C A. Bignozzi, G J. Meyer

Abstract

Time-resolved infrared measurements indicate ultrafast, < 350 fs electron injection from (4,4'dcb)2Ru(NCS)2 (1) and (5,5'dcb)2Ru(NCS)2 (2) to nanostructured TiO2 electrodes. (4,4'dcb) = (4,4'-COOH-2,2'-bipyridine)} Although rapid, the injection from 2 apparently occurs with a lower quantum yield, then that from 1. explaining a lower overall photon-to-current efficiency for 2/TiO2 solar cells. Transient visible spectroscopy reveals similar rates of both halide oxidation and injected electron-oxidized dye recombination for the two sensitizers. Substituting SnO2 for TiO2 increases the electron injection yield from 2 in the case of transparent metal oxide films and improves the photon to current efficiency. Results indicate a wavelength-dependent electron injection yield.
Citation
Journal of Physical Chemistry A
Volume
104
Issue
No. 18

Keywords

dynamics, electron injection, electron transfer, interfacial, sensitized, time-resolved, tin oxide, titanium dioxide

Citation

Heimer, T. , Heilweil, E. , Bignozzi, C. and Meyer, G. (2000), Electron Injection, Recombination and Halide Oxidation Dynamics at Dye-Sensitized Metal Oxide Interfaces, Journal of Physical Chemistry A (Accessed April 18, 2024)
Created April 30, 2000, Updated October 12, 2021