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Displaying 2776 - 2800 of 4635

Fast Quantum Gates for Neutral Atoms

September 1, 2000
Author(s)
D Jaksch, J I. Cirac, W.H. Zoller, S L. Rolston, R Cote, M D. Lukin
We propose several schemes for implementing a fast two-qubit quantum gate for neutral atoms with the gate operation time much faster than the time scales associated with the external motion of the atoms in the trapping potential. In our example, the large

Crack-Tip Structure in Soda-Lime-Silicate Glass

March 1, 2005
Author(s)
J -. Guin, Sheldon M. Wiederhorn, Theo Fett
… be sharp. We discuss our results in terms of a hydronium ion-alkali ion exchange along the crack surfaces and corrosion of the …

Effect of Resin Composition on the Mechanical and Physical Properties of Calcium Phosphate Filled Bonding Systems

August 1, 2004
Author(s)
Sabine H. Dickens, Glenn M. Flaim, C J. Floyd
… calcium phosphate filler on biaxial flexural strength and ion release from bonding agent specimens prepared without … The composition with the highest calcium and phosphate ion release was further investigated in dentin bond tests … concentrations. With respect to the calcium and phosphate ion release and bond strength properties, the formulation …

Analysis of Plasma Properties and Deposition of Amorphous Silicon Alloy Solar Cells Using Very High Frequency Glow Discharge

June 1, 2000
Author(s)
B Yan, J Yang, S Guha, Alan Gallagher
… plasma than for RF plasma. In other to study the effect of ion bombardment, the deposition of a-Si alloy solar cells … the pressure and negatively biasin the substrate increases ion bombardment energy and results in a deterioration of cell performance. It indicates that ion bombardment is not beneficial for making solar cells …

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide

July 22, 2022
Author(s)
Xiao Lyu, Pragya Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin (Charles) Cheung, Yu Shimeng, Peide Ye
In this work, we present the first experimental determination of nucleation time and domain wall (DW) velocity by studying switching dynamics of ferroelectric (FE) hafnium zirconium oxide (HZO). Experimental data and simulation results were used to

Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

August 27, 2012
Author(s)
Christopher M. Dodson, Patrick Parkinson, Kristine A. Bertness, Hannah J. Joyce, Laura M. Herz, Norman Sanford, Michael B. Johnston
The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material

Phosphorus Doping of Silicon at Substrate Temperatures Above 600 degC

October 22, 2009
Author(s)
P.E. Thompson, G.G. Jernigan, David S. Simons, P. Chi, B.T. Jonker, O.M.J. van 't Erve
P doping of Si during growth by molecular beam epitaxy (MBE) has been investigated in the temperature regime 700 oC to 870 oC. By designing a growth sequence that fully accounts for the P deposited in a delta-doped layer, and then tracks the P as it

Channel Hot-Carrier Effect of 4H-SiC MOSFET

March 2, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, John S. Suehle, Jason P. Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high
Displaying 2776 - 2800 of 4635
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