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PUBLICATIONS

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide

Published

Author(s)

Xiao Lyu, Pragya Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin (Charles) Cheung, Yu Shimeng, Peide Ye

Abstract

In this work, we present the first experimental determination of nucleation time and domain wall (DW) velocity by studying switching dynamics of ferroelectric (FE) hafnium zirconium oxide (HZO). Experimental data and simulation results were used to quantitatively study the switching dynamics. The switch speed is degraded in high aspect ratio devices due to the longer DW propagation time or with dielectric interfacial layer due to the required additional tunneling and trapping time by the leakage current assist switch mechanism.
Conference Dates
June 12-17, 2022
Conference Location
Honolulu, HI, US
Conference Title
2022 IEEE VLSI SYMPOSIUM ON TECHNOLOGY AND CIRCUITS
Pub Type
Conferences

Download Paper

DOI Link
Semiconductors and Nanoelectronics

Citation

Lyu, X. , Shrestha, P. , Si, M. , Wang, P. , Li, J. , Cheung, K. , Shimeng, Y. and Ye, P. (2022), Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide, 2022 IEEE VLSI SYMPOSIUM ON TECHNOLOGY AND CIRCUITS, Honolulu, HI, US, [online], https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830501 (Accessed April 26, 2024)

Created July 22, 2022, Updated November 29, 2022