Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide
Xiao Lyu, Pragya Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin (Charles) Cheung, Yu Shimeng, Peide Ye
In this work, we present the first experimental determination of nucleation time and domain wall (DW) velocity by studying switching dynamics of ferroelectric (FE) hafnium zirconium oxide (HZO). Experimental data and simulation results were used to quantitatively study the switching dynamics. The switch speed is degraded in high aspect ratio devices due to the longer DW propagation time or with dielectric interfacial layer due to the required additional tunneling and trapping time by the leakage current assist switch mechanism.
June 12-17, 2022
Honolulu, HI, US
2022 IEEE VLSI SYMPOSIUM ON TECHNOLOGY AND CIRCUITS
, Shrestha, P.
, Si, M.
, Wang, P.
, Li, J.
, Cheung, K.
, Shimeng, Y.
and Ye, P.
Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide, 2022 IEEE VLSI SYMPOSIUM ON TECHNOLOGY AND CIRCUITS, Honolulu, HI, US, [online], https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830501
(Accessed December 10, 2023)