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Deep Silicon Etching for X-Ray Diffraction Devices Fabrication

Published

Author(s)

Houxun Miao, Mona Mirzaeimoghri, Lei Chen, Han Wen

Abstract

We report deep reactive ion etching of silicon gratings via cryogenic and Bosch processes. An aspect ratio of > 50 is achieved for 400 nm period gratings with both processes.
Conference Dates
August 13-17, 2017
Conference Location
Santa Fe, NM, US
Conference Title
2017 International Conference on Optical MEMS and Nanophotonics

Keywords

cryogenic silicon etching, Bosch process, x-ray gratings

Citation

Miao, H. , Mirzaeimoghri, M. , Chen, L. and Wen, H. (2017), Deep Silicon Etching for X-Ray Diffraction Devices Fabrication, 2017 International Conference on Optical MEMS and Nanophotonics, Santa Fe, NM, US, [online], https://doi.org/10.1109/OMN.2017.8051446, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=923541 (Accessed November 28, 2021)
Created September 27, 2017, Updated October 12, 2021