U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Role of Oxygen Precipitation Processes in Defect Formation and Evolution in Oxygen Implanted Silicon-on-Insulator

Published

Author(s)

J Park, J. H. Lee, D. Venables, S. J. Krause, Peter Roitman
Proceedings Title
Proc., Materials Research Society Symposium, Materials Synthesis and Processing Using Ion Beams
Volume
279
Conference Location
Boston, MA, USA
Pub Type
Conferences

Citation

Park, J. , Lee, J. , Venables, D. , Krause, S. and Roitman, P. (1993), Role of Oxygen Precipitation Processes in Defect Formation and Evolution in Oxygen Implanted Silicon-on-Insulator, Proc., Materials Research Society Symposium, Materials Synthesis and Processing Using Ion Beams, Boston, MA, USA (Accessed October 7, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 30, 1993, Updated October 12, 2021