Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Role of Oxygen Precipitation Processes in Defect Formation and Evolution in Oxygen Implanted Silicon-on-Insulator

Published

Author(s)

J Park, J. H. Lee, D. Venables, S. J. Krause, Peter Roitman
Proceedings Title
Proc., Materials Research Society Symposium, Materials Synthesis and Processing Using Ion Beams
Volume
279
Conference Location
Boston, MA, USA

Citation

Park, J. , Lee, J. , Venables, D. , Krause, S. and Roitman, P. (1993), Role of Oxygen Precipitation Processes in Defect Formation and Evolution in Oxygen Implanted Silicon-on-Insulator, Proc., Materials Research Society Symposium, Materials Synthesis and Processing Using Ion Beams, Boston, MA, USA (Accessed March 5, 2024)
Created December 30, 1993, Updated October 12, 2021