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Role of Oxygen Precipitation Processes in Defect Formation and Evolution in Oxygen Implanted Silicon-on-Insulator

Published

Author(s)

J Park, J. H. Lee, D. Venables, S. J. Krause, Peter Roitman
Proceedings Title
Proc., Materials Research Society Symposium, Materials Synthesis and Processing Using Ion Beams
Volume
279
Conference Location
Boston, MA, USA

Citation

Park, J. , Lee, J. , Venables, D. , Krause, S. and Roitman, P. (1993), Role of Oxygen Precipitation Processes in Defect Formation and Evolution in Oxygen Implanted Silicon-on-Insulator, Proc., Materials Research Society Symposium, Materials Synthesis and Processing Using Ion Beams, Boston, MA, USA (Accessed June 13, 2024)

Issues

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Created December 30, 1993, Updated October 12, 2021