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Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

Published

Author(s)

Christopher M. Dodson, Patrick Parkinson, Kristine A. Bertness, Hannah J. Joyce, Laura M. Herz, Norman Sanford, Michael B. Johnston

Abstract

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 plus or minus} 120 cm2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.
Citation
Nano Letters
Volume
12
Issue
9

Keywords

semiconductor transport properties, gallium nitride, GaN, nanowires, terahertz spectroscopy

Citation

Dodson, C. , Parkinson, P. , Bertness, K. , Joyce, H. , Herz, L. , Sanford, N. and Johnston, M. (2012), Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires, Nano Letters, [online], https://doi.org/10.1021/nl301898m, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=911320 (Accessed April 23, 2024)
Created August 26, 2012, Updated October 12, 2021