Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

Published

August 27, 2012

Author(s)

Christopher M. Dodson, Patrick Parkinson, Kristine A. Bertness, Hannah J. Joyce, Laura M. Herz, Norman Sanford, Michael B. Johnston

Abstract

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 plus or minus} 120 cm²/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.

Citation

Nano Letters

Volume

12

Issue

9

Pub Type

Journals

Download Paper

https://doi.org/10.1021/nl301898m

Local Download

Keywords

semiconductor transport properties, gallium nitride, GaN, nanowires, terahertz spectroscopy

Citation

Dodson, C. , Parkinson, P. , Bertness, K. , Joyce, H. , Herz, L. , Sanford, N. and Johnston, M. (2012), Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires, Nano Letters, [online], https://doi.org/10.1021/nl301898m, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=911320 (Accessed April 18, 2024)