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Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires
Published
Author(s)
Christopher M. Dodson, Patrick Parkinson, Kristine A. Bertness, Hannah J. Joyce, Laura M. Herz, Norman Sanford, Michael B. Johnston
Abstract
The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 plus or minus} 120 cm2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.
Dodson, C.
, Parkinson, P.
, Bertness, K.
, Joyce, H.
, Herz, L.
, Sanford, N.
and Johnston, M.
(2012),
Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires, Nano Letters, [online], https://doi.org/10.1021/nl301898m, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=911320
(Accessed October 10, 2025)