Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Channel Hot-Carrier Effect of 4H-SiC MOSFET



Liangchun (. Yu, Kin P. Cheung, John S. Suehle, Jason P. Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu


SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.
Materials Science Forum


channel hot-carrier effect, MOSFET, 4H-SiC


Yu, L. , Cheung, K. , Suehle, J. , Campbell, J. , Sheng, K. , Lelis, A. and Ryu, S. (2009), Channel Hot-Carrier Effect of 4H-SiC MOSFET, Materials Science Forum, [online], (Accessed July 21, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created March 2, 2009, Updated February 19, 2017