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Channel Hot-Carrier Effect of 4H-SiC MOSFET

Published

Author(s)

Liangchun (. Yu, Kin P. Cheung, John S. Suehle, Jason P. Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu

Abstract

SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.
Citation
Materials Science Forum

Keywords

channel hot-carrier effect, MOSFET, 4H-SiC

Citation

Yu, L. , Cheung, K. , Suehle, J. , Campbell, J. , Sheng, K. , Lelis, A. and Ryu, S. (2009), Channel Hot-Carrier Effect of 4H-SiC MOSFET, Materials Science Forum, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=900181 (Accessed February 21, 2024)
Created March 2, 2009, Updated February 19, 2017