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Displaying 1651 - 1675 of 2289

Long-Term Stability of UHMWPE Fibers

February 18, 2015
Author(s)
Amanda L. Forster, Aaron M. Forster, Joannie W. Chin, Chiao-Chi Lin, Sylvain H. Petit, Kai-Li Kang, Nicholas G. Paulter Jr., Michael A. Riley, Kirk D. Rice
The superior performance of ultra-high molecular weight polyethylene fi bers is predicated on the development of a highly aligned molecular structure that allows the polymer to exhibit a superior strength in the axial direction of the fi ber. Body armor

Adhesion, Copper Voiding, and Debonding Kinetics of Copper/Dielectric Diffusion Barrier Films

October 13, 2009
Author(s)
Ryan P. Birringer, Roey Shaviv, Thomas Mountsier, Jon Reid, Jian Zhou, Roy H. Geiss, David T. Read, Reinhold Dauskardt
Effects of the chemistry of electroplated copper films on stress-induced voiding and adhesion between the films and a SiN barrier layer are reported. The void density as observed by scanning electron microscopy decreased markedly with increasing Cu purity

Topography of epitaxial GaAs surfaces for growth

April 30, 2009
Author(s)
Susan Y. Lehman, Alexana Roshko, Richard Mirin, Kristine A. Bertness, Todd E. Harvey, Keith D. Cobry
… growth procedures. After thermal desorption of the surface oxide, wafers etched in HCl:H 2 O (1:1) were smother than as …

Nano- and Atomic-Scale Length Metrology

January 1, 2006
Author(s)
Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, Ndubuisi George Orji, Shaw C. Feng, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Wei Chu
… for measurement of dopant penetration depths and gate oxide thickness, another quantity specified in the ITRS, and …

Arsenic Thermodynamic Data and Environmental Geochemistry

January 1, 2003
Author(s)
D K. Nordstrom, Donald G. Archer
Thermodynamic data are critical as input to models that attempt to interpret the geochemistry of environmentally important elements such as arsenic. Unfortunately, the thermodynamic data for mineral phases of arsenic and their solubilities have been highly

Crystal Structures and Reference Diffraction Patterns of BaSrR 4 O 8

September 1, 2002
Author(s)
Winnie K. Wong-Ng, James A. Kaduk, J Dillingham
The structure of BaSrR4O8 (where R = La, Nd, Sm, Gd, Eu, Dy, Ho, Y, Er, Tm, Yb, and Lu) has been investigated, and the X-ray reference patterns of these compounds have been prepared using the Rietveld refinement technique. BaSrR2O4 are isostructural to

Workshop on Temperature Measurement of Semiconductor Wafers Using Thermocouples

January 1, 2001
Author(s)
Kenneth G. Kreider, D P. DeWitt, Benjamin K. Tsai, B Lojek
Temperature measurement is an important parameter in most semiconductor processes. These measurements are necessary in temperature ranges as low as below 0 C in some plasma etch processes, to near room temperature for soft bakes of resists, to 500 C for

Suppression of Low Strain Rate Flames by an Agent (NISTIR 6588)

November 1, 2000
Author(s)
Anthony P. Hamins, Matthew F. Bundy, I K. Puri
The structure and suppression of low strain rate methane-air nonpremixed flames were investigated experimentally and computationally. Measurements of the critical suppression conditions were conducted using N2, CO2, and CF3Br added to the fuel or oxidizer
Displaying 1651 - 1675 of 2289
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