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Ballistic Magnetoresistance in a Nanocontact Between a Ni Cluster and a Magnetic Thin Film



M Munoz, G G. Qian, N Karar, H. Cheng, I G. Saveliev, N Garcia, Thomas P. Moffat, P J. Chen, L Gan, William F. Egelhoff Jr.


We present measurements of ballistic magnetoresistance in nanocontacts grown by electrodeposition of Ni microclusters on magnetic thin films covered by aluminum oxide layers, using a technique proposed by Schad, et al. The measurements are made on a single Ni clusters in contact with a Ni and Co thin-film. We measure the magnetoresistance and observe the relaxation of the magnetization and electrical resistance as a function of time under the influence of a direct current. The clusters are elctrodeposited under several different experimental conditions. Some are deposited randomly on an unpatterned film and some through various patterned photoresists that control the location at which the cluster is grown. The typical contact size is estimated from the electrical resistance to be 10 nm to 30 nm. Ballistic magnetoresistance values up to 14 % are obtained in these preliminary experiments.
Applied Physics Letters
No. 18


ballistic magnetoresistance, cobalt, nanocontact, nickel clusters electrodeposition, pinholes


Munoz, M. , Qian, G. , Karar, N. , Cheng, H. , Saveliev, I. , Garcia, N. , Moffat, T. , Chen, P. , Gan, L. and Egelhoff Jr., W. (2001), Ballistic Magnetoresistance in a Nanocontact Between a Ni Cluster and a Magnetic Thin Film, Applied Physics Letters (Accessed July 13, 2024)


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Created September 30, 2001, Updated October 12, 2021