Ballistic Magnetoresistance in a Nanocontact Between a Ni Cluster and a Magnetic Thin Film

Published

October 1, 2001

Author(s)

M Munoz, G G. Qian, N Karar, H. Cheng, I G. Saveliev, N Garcia, Thomas P. Moffat, P J. Chen, L Gan, William F. Egelhoff Jr.

Abstract

We present measurements of ballistic magnetoresistance in nanocontacts grown by electrodeposition of Ni microclusters on magnetic thin films covered by aluminum oxide layers, using a technique proposed by Schad, et al. The measurements are made on a single Ni clusters in contact with a Ni and Co thin-film. We measure the magnetoresistance and observe the relaxation of the magnetization and electrical resistance as a function of time under the influence of a direct current. The clusters are elctrodeposited under several different experimental conditions. Some are deposited randomly on an unpatterned film and some through various patterned photoresists that control the location at which the cluster is grown. The typical contact size is estimated from the electrical resistance to be 10 nm to 30 nm. Ballistic magnetoresistance values up to 14 % are obtained in these preliminary experiments.

Citation

Applied Physics Letters

Volume

79

Issue

No. 18

Pub Type

Journals

Keywords

ballistic magnetoresistance, cobalt, nanocontact, nickel clusters electrodeposition, pinholes

Citation

Munoz, M. , Qian, G. , Karar, N. , Cheng, H. , Saveliev, I. , Garcia, N. , Moffat, T. , Chen, P. , Gan, L. and Egelhoff Jr., W. (2001), Ballistic Magnetoresistance in a Nanocontact Between a Ni Cluster and a Magnetic Thin Film, Applied Physics Letters (Accessed November 5, 2025)