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Workshop on Temperature Measurement of Semiconductor Wafers Using Thermocouples

Published

Author(s)

Kenneth G. Kreider, D P. DeWitt, Benjamin K. Tsai, B Lojek

Abstract

Temperature measurement is an important parameter in most semiconductor processes. These measurements are necessary in temperature ranges as low as below 0 C in some plasma etch processes, to near room temperature for soft bakes of resists, to 500 C for low temperature chemical vapor deposition (CVD) and sputter deposition, and all the way up to 1150 C for oxidation. Accurate temperature measurements are needed to control the quality of the wafer processing. Although non-contact temperature measurements have advantages on the processing tools, these techniques must be calibrated by running expensive test wafers or by comparison with contact sensors. The thermocouple can be a very useful sensor when calibrated on an international temperature scale such as the International Temperature Scale of 1990 (ITS-90). In this workshop, we will describe how to use thermocouples for measurements of temperature in semiconductor processing and how to achieve the highest accuracy.
Citation
NIST Interagency/Internal Report (NISTIR) - 6566
Report Number
6566

Keywords

process instrumentation, semiconductor processing, surface temperatures, temperature measurement, thermocouples

Citation

Kreider, K. , DeWitt, D. , Tsai, B. and Lojek, B. (2001), Workshop on Temperature Measurement of Semiconductor Wafers Using Thermocouples, NIST Interagency/Internal Report (NISTIR), National Institute of Standards and Technology, Gaithersburg, MD (Accessed December 13, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created January 1, 2001, Updated October 16, 2008