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Displaying 901 - 925 of 2289

Electronic Conductivity in a Porous Vanadyl Prussian Blue Analogue upon Air Exposure

November 6, 2017
Author(s)
Mary Anne Manumpil, Carmen Leal-Cervantes, Matthew R. Hudson, Craig Brown, Hemamala I. Karunadasa
Exposure to humid oxygen or ambient air affords a 5-or-der-of-magnitude increase in the electronic conductivity of a new Prussian blue analog incorporation Co(II) and V(IV)-oxo units. Oxidation produces a mixed-valence framework, where the oxygen exposure

Time Dependent Breakdown of Ultra-Thin Gate Dielectrics Under Pulsed Biased Stress

March 1, 2001
Author(s)
Bin Wang, John S. Suehle, Eric M. Vogel, J B. Bernstein
… (N^dBD), and the number of defects generated inside the oxide as a function of stress time were monitored during each stress dondition. Oxide lifetime under unipolar pulsed bias is similar to that … of a lifetime increase under bipolar pulsed bias for the oxide thickness and voltage range used in this study suggests …

Photoreflectance Study of the Chemically Modified (100) GaAs Surface

May 1, 1994
Author(s)
John A. Dagata, O Glembocki, J Tuchman, K Ko, S Pang
… of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this … midgap. The P(2)S(5) passivation produces a thin Ga rich oxide which is observed to pin the Fermi-level near the … pinning position to the stoichiometry of the GaAs/oxide interface. …

Strain-Induced Creation and Switching of Anion Vacancy Layers in Perovskite Oxynitrides

November 23, 2020
Author(s)
Takafumi Yamamoto, Akira Chikamatsu, Shunsaku Kitagawa, Nana Izumo, Shunsuke Yamashita, Hiroshi Takatsu, Masayuki Ochi, Takahiro Maryuama, Morito Namba, Wenhao Sun, Takahide Nakashima, Fumitaka Takeiri, Kotaro Fujii, Masatomo Yashima, Yuki Sugisawa, Masahito Sano, Yashushi Hirose, Daiichiro Sekiba, Craig Brown, Takashi Honda, Kazutaka Ikeda, Toshiya Otomo, Kazuhiko Kuroki, Kenji Ishida, Takao Mori, Koji Kimoto, Tetsuya Hasegawa, Hiroshi Kageyama
… the observed biaxial strain effect along [111]. Like oxide heterostructures, the oxynitride with (111) defect …

Detection of individual spin species via frequency-modulated charge pumping

February 2, 2022
Author(s)
James Ashton, Mark Anders, Jason Ryan
… in sub-micron MOSFETs, in which scaling of the gate oxide yields lethal oxide leakage currents, eliminates interference of the charge … pumping, which would otherwise be completely obscured by oxide leakage. This work provides a unique avenue for …

Spin Dependent Recombination Study of the Atomic-Scale Effects of Fluorine on the Negative Bias Temperature Instability

April 26, 2009
Author(s)
J.T. Ryan, Patrick M. Lenahan, A.T. Krishnan, S. Krishnan, Jason Campbell
… through the incorporation of fluorine in the gate oxide of pure SiO2 pMOSFETs. In this study, we use spin … may be useful in modeling NBTI response in fluorinated oxide devices. Our results also provide a fundamental … devices, but is ineffective at reducing NBTI in nitrided oxide devices. …

An Electrically-Detected Magnetic Resonance Study of the Atomic-Scale Effects of Fluorine on the Negative Bias Temperature Instability

January 5, 2009
Author(s)
J.T. Ryan, Patrick M. Lenahan, A.T. Krishnan, S. Krishnan, Jason Campbell
… through the incorporation of fluorine in the gate oxide. In this study, we use the electrically-detected … maybe useful in modeling NBTI response in fluorinated oxide devices. Our results also help to provide a fundamental … devices, but is ineffective at reducing NBTI in nitrided oxide devices. …

Measurement of Silicon Dioxide Film Thicknesses by X-ray Photoelectron Spectroscopy

February 1, 2001
Author(s)
Cedric J. Powell, Aleksander Jablonski
… and Mg Kα x rays. Calculations were made of substrate and oxide Si 2p photoelectron currents for different oxide thicknesses and emission angles using an algorithm … determined from the substrate currents with and without an oxide overlayer of a certain thickness, varied weakly with …

Overview of the Radiometric Calibration of MOBY

January 1, 2002
Author(s)
D K. Clark, M Feinholz, M Yarbrough, B. Carol Johnson, Steven W. Brown, Y S. Kim, R Barnes
… Systems, Conference | 6th | Earth Observing Systems VI | SPIE …

In-Situ Metrology to Characterize Water Vapor Delivery during Atomic Layer Deposition

May 2, 2016
Author(s)
Tariq Ahmido, William A. Kimes, Brent A. Sperling, Joseph T. Hodges, James E. Maslar
… Water is often employed as the oxygen source in metal oxide atomic layer deposition (ALD) processes. It has been … variations in the amount of water delivered during metal oxide ALD can impact the oxide film properties. Hence, one contribution to optimizing …
Displaying 901 - 925 of 2289
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