October 12, 2008
Author(s)
Liangchun (. Yu, Kin P. Cheung, Jason P. Campbell, John S. Suehle, Kuang Sheng
… However, it has long been a common believe that the gate oxide breakdown reliability is a show-stopper, particularly … In this paper, we report that the thermally grown gate oxide on 4H-SiC is intrinsically reliable even at temperature … Oxide Reliability of SiC MOS Devices …