U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Heavy Ion Induced Soft Breakdown of Thin Gate Oxides

Published

Author(s)

J. F. Conley, John S. Suehle, A. H. Johnston, Bin Wang, T Miyahara, Eric M. Vogel, J B. Bernstein

Abstract

Heavy ion induced soft and hard breakdown are investigated in thin gate oxides as a function of LET, fluence, and voltage applied during irradiation. It is found that post-irradiation oxide conduction is well described by the Sune quantum point contact model.
Citation
IEEE Trans. on Nuclear Science
Volume
48
Issue
6
Pub Type
Journals

Keywords

silicon dioxide, reliability, radiation effects, soft breakdown, heavy ion irradiation, microelectronics

Citation

Conley, J. , Suehle, J. , Johnston, A. , Wang, B. , Miyahara, T. , Vogel, E. and Bernstein, J. (2001), Heavy Ion Induced Soft Breakdown of Thin Gate Oxides, IEEE Trans. on Nuclear Science (Accessed April 19, 2024)

Created November 30, 2001, Updated October 12, 2021