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Heavy Ion Induced Soft Breakdown of Thin Gate Oxides

Published

Author(s)

J. F. Conley, John S. Suehle, A. H. Johnston, Bin Wang, T Miyahara, Eric M. Vogel, J B. Bernstein

Abstract

Heavy ion induced soft and hard breakdown are investigated in thin gate oxides as a function of LET, fluence, and voltage applied during irradiation. It is found that post-irradiation oxide conduction is well described by the Sune quantum point contact model.
Citation
IEEE Trans. on Nuclear Science
Volume
48
Issue
6

Keywords

silicon dioxide, reliability, radiation effects, soft breakdown, heavy ion irradiation, microelectronics

Citation

Conley, J. , Suehle, J. , Johnston, A. , Wang, B. , Miyahara, T. , Vogel, E. and Bernstein, J. (2001), Heavy Ion Induced Soft Breakdown of Thin Gate Oxides, IEEE Trans. on Nuclear Science (Accessed April 13, 2024)
Created November 30, 2001, Updated October 12, 2021