Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

EBSD Measurement of Strains in GaAs due to Oxidation of Buried AlGaAs Layers

Published

Author(s)

T Keller, Alexana Roshko, R.H. Geiss, Kristine A. Bertness, T.P. Quinn

Abstract

We have characterized elastic strain fields associated with the wet-thermal oxidation of buried AlxGa1-xAs (x 0.98) layers of thickness 80 nm, situated between GaAs layers of thickness 200 nm, on a GaAs substrate. The compressive strains accompanying oxidation can exceed 6% and may lead to interlayer delamination or fracture. Automated electron backscatter diffraction measurements were performed about individual oxide growth fronts on resolution of better than 30 nm, using patter sharpness quantification. Measured strain fields are elongated along the interfaces and extend approximately 1υm around the growth front. We present efforts to quantify the spatial extent of these strain fields, as well as finite element simulations of the mechanics of oxide formation in this structure.
Citation
Microelectronics Engineering
Volume
75

Citation

Keller, T. , Roshko, A. , Geiss, R. , Bertness, K. and Quinn, T. (2004), EBSD Measurement of Strains in GaAs due to Oxidation of Buried AlGaAs Layers, Microelectronics Engineering, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31470 (Accessed April 24, 2024)
Created February 26, 2004, Updated October 12, 2021