Keller, T.
, Roshko, A.
, Geiss, R.
, Bertness, K.
and Quinn, T.
(2004),
EBSD Measurement of Strains in GaAs due to Oxidation of Buried AlGaAs Layers, Microelectronics Engineering, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31470
(Accessed April 26, 2024)
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EBSD Measurement of Strains in GaAs due to Oxidation of Buried AlGaAs Layers
Published
Author(s)
T Keller, , R.H. Geiss, , T.P. Quinn
Abstract
We have characterized elastic strain fields associated with the wet-thermal oxidation of buried AlxGa1-xAs (x 0.98) layers of thickness 80 nm, situated between GaAs layers of thickness 200 nm, on a GaAs substrate. The compressive strains accompanying oxidation can exceed 6% and may lead to interlayer delamination or fracture. Automated electron backscatter diffraction measurements were performed about individual oxide growth fronts on resolution of better than 30 nm, using patter sharpness quantification. Measured strain fields are elongated along the interfaces and extend approximately 1υm around the growth front. We present efforts to quantify the spatial extent of these strain fields, as well as finite element simulations of the mechanics of oxide formation in this structure.Citation
Microelectronics Engineering
Volume
75
Pub Type
Journals
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Citation
Created February 26, 2004, Updated October 12, 2021