Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 1201 - 1225 of 2957

Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N,N'-Bis(4-Methoxyphenyl)aniline Side Chains as Gate Dielectrics

August 1, 2018
Author(s)
Qingyang Zhang, Tejaswini S. Kale, Evan Plunkett, Wei Shi, Brian Kirby, Daniel H. Reich, Howard E. Katz
Charge trapping and storage in polymer dielectrics can be harnessed for the control of semiconductor device behavior, including organic transistors. For example, gate insulators chosen for organic transistors have an important effect on both bias stress

Synthesis, Fabrication, and Heterostructure of Charged, Substituted Polystyrene Multilayer Dielectrics and Their Effects in Pentacene Transistors

May 10, 2016
Author(s)
Olivia J. Alley, Evan Plunkett, Tejaswini S. Kale, Xin Guo, Grace McClintock, Manasa Bhupathiraju, Brian Kirby, Daniel H. Reich, Howard E. Katz
Charge trapping and storage in polymer dielectric can be harnessed for the control of semiconductor device behavior, including organic transistors. For example, gate insulators chosen for organic transistors have an important effect on both bias stress

Fire Hazards of Dry Versus Watered Christmas Trees

December 15, 2020
Author(s)
Matthew S. Hoehler, Matthew F. Bundy, Laurean A. DeLauter, Robin L. Materese, Leon Gerskovic, Jose R. Garcia
… a book of matches with the match heads wrapped with a thin nickel- chromium wire that heats, igniting the matchbook, …

Metrology for the next generation of semiconductor devices

October 12, 2018
Author(s)
Ndubuisi G. Orji, Mustafa Badaroglu, Bryan M. Barnes, Carlos Beitia, Benjamin D. Bunday, Umberto Celano, Regis J. Kline, Mark Neisser, Yaw S. Obeng, Andras Vladar
The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering

Policy Machine: Towards a General Purpose Enterprise-Wide Operating Environment

August 28, 2014
Author(s)
David F. Ferraiolo, Larry Feldman, Gregory A. Witte
The ability to control access to sensitive data in accordance with policy is perhaps the most fundamental security requirement. Despite over four decades of security research, the limited ability for existing access control mechanisms to enforce a

Experimental measurements and noise analysis of a cryogenic radiometer

July 10, 2014
Author(s)
Solomon I. Woods, Timothy M. Jung, Adriaan C. Carter, Raju V. Datla , Stephen M. Carr
A cryogenic radiometer device, intended for use as part of an electrical-substitution radiometer, was measured at low temperature. The device consists of a receiver cavity mechanically and thermally connected to a temperature-controlled stage through a

A fitting program for molecules with two equivalent methyl tops and C2v point-group symmetry at equilibrium: Application to existing microwave, millimeter, and sub-millimeter wave measurements of acetone

May 31, 2013
Author(s)
Jon T. Hougen, Vadim V. Ilyushin
A program, called PAM_C2v_2tops, for fitting the high-resolution torsion-rotation spectra of molecules with two equivalent methyl rotors and C2v symmetry at equilibrium is described and applied to the spectrum of acetone [(CH3)2CO]. The G36 permutation

Thermal Correction to the Molar Polarizability of a Boltzmann Gas (Brief Report)

March 1, 2011
Author(s)
Ulrich D. Jentschura, M. Puchalski, Peter Mohr
The metrology of fundamental quantities in atomic physics has been crucial for a number of advanced determinations of fundamental constants. In addition to very accurate frequency measurements, the molar polarizability of atomic gases has recently been

Dynamic Error Correction of a Digitizer for Time Domain Metrology

February 1, 2003
Author(s)
David I. Bergman
A method for numerical correction of distortion in a digitizer used for metrology applications is described. Investigation of the digitizer's error behavior in the phase plane leads to the development of an analytic error model that describes the digitizer

High-Resolution Infrared Spectrum of the Ring-Puckering Band, N 10 of Diborane

June 1, 2000
Author(s)
Walter J. Lafferty, J.- M. Flaud, R L. Sams, Thomas A. Blake, S W. Sharpe
The spectrum of the Ņ 10 band of diborane, arising from the ring puckering vibration, has been obtained with a spectral resolution of 0.0015 cm -1 in the region 275 to 400 cm -1. The spectrum of a sample enriched in 10B was recorded as well as one with

Engineering Intelligent Systems

September 1, 1998
Author(s)
James S. Albus
What is intelligence? Where did it come from? What is its fundamental nature? What are its elemental constituents? Can it be created artificially? If so how? The answers to these questions are beginning to emerge. As the second millennium draws to a close

The Polarizability of Helium and Gas Metrology

June 22, 2007
Author(s)
James W. Schmidt, R Gavioso, E May, Michael R. Moldover
Using a quasi-spherical, microwave cavity resonator, we measured the refractive index of helium to deduce its molar polarizability A ε in the limit of zero density. We obtained (A ε,meas - A ε,theory)/A ε = (-1.8plus or minus} 8.4)× 10 -6, where the
Displaying 1201 - 1225 of 2957
Was this page helpful?