Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

Published

June 14, 2016

Author(s)

Daniel B. Gopman, Cindi L. Dennis, Andrew P. Chen, Yury Y. Iunin, Peter Finkel, Margo Staruch, Robert D. Shull

Abstract

Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate of Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown on ferroelectric PZT [Pb(ZrxTi1−x)O3] substrate plates. Electric fields up to ± 2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating moderate strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high-anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices.

Citation

Nature - Scientific Reports

Volume

6

Pub Type

Journals

Download Paper

https://doi.org/10.1038/srep27774

Keywords

magnetoelectric effects, perpendicular magnetic anisotropy, strain

Citation

Gopman, D. , Dennis, C. , Chen, A. , Iunin, Y. , Finkel, P. , Staruch, M. and Shull, R. (2016), Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy, Nature - Scientific Reports, [online], https://doi.org/10.1038/srep27774 (Accessed April 19, 2024)