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Displaying 51 - 75 of 715

A low-swelling, polymeric mixed conductor operating in aqueous electrolytes

November 30, 2020
Author(s)
Lee J. Richter, Tommaso Nicolini, Jokubas Surgailis, Achileas Savva, Guillaume Wantz, Olivier Dautel, Georges Hadiziioannou, Natalie Stingelin
Organic mixed conductors find use in batteries, bioelectronics technologies, neuromorphic computing and sensing. While great progress has been achieved, polymer-based mixed conductors frequently experience significant volumetric changes during ion uptake

Existence conditions for phononic frequency combs

November 5, 2020
Author(s)
Zhen Qi, Curtis R. Menyuk, Jason Gorman, Adarsh V. Ganesan
Recently, the mechanical analog of optical frequency combs, phononic frequency combs, have been demonstrated in mechanical resonators and have gained interest since their comb frequencies can be in the range of kilohertz to gigahertz. The physical origin

Storing and retrieving wavefronts with resistive temporal memory

October 10, 2020
Author(s)
Advait Madhavan, Mark D. Stiles
We extend the reach of temporal computing schemes by developing a memory for multi-channel temporal patterns or "wavefronts." This temporal memory re-purposes conventional one-transistor-one-resistor (1T1R) memristor crossbars for use in an arrival-time

High-Resolution Biochemical Activity Measurements with Commercial Transistors

September 1, 2020
Author(s)
Seulki Cho, Son T. Le, Curt A. Richter, Arvind Balijepalli
We demonstrate that single-gated, commercially-sourced, field-effect transistors (FETs) operated with a lock- in amplifier (LIA) under closed-loop control can achieve an average pH resolution of 9x10^-4. This performance represents an 8-fold improvement

High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs)

August 14, 2020
Author(s)
Robin P. Hansen, Amit K. Agrawal, Michael Shur, Jerry Tersoff, Babak Nikoobakht, Yuqin Zong
"Efficiency droop," i.e., a decline in brightness of light-emitting diodes (LEDs) at high electrical currents, limits the performance of all commercial LEDs and has limited the output power of submicrometer LEDs and lasers to nanowatts. We present a fin p

Elucidating Charge Transport Mechanisms in Graphene Inks

August 7, 2020
Author(s)
Ana C. de Moraes1, Jan Obrzut, Vinod K. Sangwan, Julia R. Downing, Lindsay E. Chaney, Dinesh K. Patel, Randolph Elmquist, Mark C. Hersam
Solution-processed graphene inks using ethyl cellulose polymer as a binder/stabilizer were blade-coated into large area films. Systematic charge transport characterization showed graphene patterns with high mobility ( 160 cm2 V-1 s-1), low energy gap

Crystallographic Polarity Measurements in Two-Terminal GaN Nanowire Devices by Lateral Piezoresponse Force Microscopy

July 23, 2020
Author(s)
Matthew Brubaker, Alexana Roshko, Samuel Berweger, Paul T. Blanchard, Todd E. Harvey, Norman A. Sanford, Kris A. Bertness
Lateral piezoresponse force microscopy (L-PFM) is demonstrated as a reliable method for determining the crystallographic polarity of individual, dispersed GaN nanowires that were functional components in electrical test structures. In contrast to PFM

The effect of strain on tunnel barrier height in silicon quantum devices

July 13, 2020
Author(s)
Ryan Stein, Michael Stewart
Semiconductor quantum dot (QD) devices experience a modulation of the band structure at the edge of lithographically defined gates due to mechanical strain. This modulation can play a prominent role in the device behavior at low temperatures, where QD

Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays

July 2, 2020
Author(s)
Pragya R. Shrestha, xiao Lyu, Mengwei Si, Jason P. Campbell, Kin P. Cheung, Peide Ye
The polarization switching speed of ferroelectric (FE) hafnium zirconium oxide (HZO) is studied with the device size down to sub-μm in lateral dimension. Ultrafast measurement of transient switching current on metal-ferroelectric-metal (MFM) device with a

Anomalous accelerated negative-bias- instability (NBI) at low drain bias

June 30, 2020
Author(s)
Kin P. Cheung
We observed at very low drain bias an anomalous acceleration of Negative-bias-instability at room temperature, as if the channel temperature has been raised significantly. The channel width and channel length dependent of this acceleration suggest that in

Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions

June 30, 2020
Author(s)
Dmitry Veksler, gennadi bersuker, A W. Bushmaker, Maribeth Mason, Pragya Shrestha, Kin P. Cheung, Jason Campbell, T Rueckes, L Clevlend, H Luan, D C. Gilmer
Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs

Efficient hybrid mixed-ion perovskite photovoltaics: in situ diagnostics of the roles of cesium and potassium alkali cation addition

June 19, 2020
Author(s)
Ming Chun Tang, Yuanyuan Fan, Dounya Barrit, Ruipeng Li, Hoang X. Dang, Siyuan Zhang, Timothy J. Magnanelli, Nhan V. Nguyen, Edwin J. Heilweil, Christina A. Hacker, Detlet-M Smilgies, Kui Zhao, Aram Amassian, Thomas D. Anthopoulos
Perovskite photovoltaics have made extraordinary progress in efficiency and stability in the past few years owing to process and formulation developments like antisolvent drip and mixed-cation mixed-halide compositions. Perovskite solar cells performance

Contact resistance in organic field-effect transistors: conquering the barrier

May 15, 2020
Author(s)
Matthew Waldrip, Oana Jurchescu, David J. Gundlach, Emily Bittle
Organic semiconductors have sparked significant interest due to their inherent properties as flexible, solution processible, and chemically tunable electronic materials. In the last 10 years, the improvements in charge carrier mobility in small molecule

Optimization of photoluminescence from W centers in silicon-on-insulator for waveguide-coupled sources

May 13, 2020
Author(s)
Sonia M. Buckley, Alexander N. Tait, Galan Moody, Kevin L. Silverman, Sae Woo Nam, Richard P. Mirin, Jeffrey M. Shainline, Stephen Olson, Joshua Hermann, Satyvalu Papa Rao
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218\textmu m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diode sources. Here we optimize

In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition

April 21, 2020
Author(s)
Ju Ying Shang, Michael J. Moody, Jiazhen Chen, Sergiy Krylyuk, Albert Davydov, Tobin J. Marks, Lincoln J. Lauhon
Layered transition metal dichalcogenides (TMDs) and two-dimensional (2D) materials are widely studied as complements to Si complementary metal-oxide-semiconductor technology. Field-effect transistors (FETs) made with 2D materials often exhibit mobilities

Comparable Enhancement of TERS signals from WeSe2 on Chromium and Gold.

April 6, 2020
Author(s)
Albert Davydov, Sergiy Krylyuk, Angela R. Hight Walker, Bojan R. Ilic, Andrey Krayev, Ashish Bhattarai, Alan G. Joly, Matej Velicky, Patrick Z. El-Khoury
Plasmonic tip-sample junctions, at which the incident and scattered optical fields are localized and optimally enhanced, are often exploited to achieve ultrasensitive and highly spatially localized tip-enhanced Raman scattering (TERS). Recent work has

Auto-tuning of double dot devices it in situ with machine learning

March 31, 2020
Author(s)
Justyna Zwolak, Thomas McJunkin, Sandesh Kalantre, J. P. Dodson, Evan MacQuarrie, D. E. Savage, M. G. Lagally, S N. Coppersmith, Mark A. Eriksson, Jacob Taylor
The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time- consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the \it in situ} implementation of a

Nanoscale MOSFET as a potential Room-Temperature Quantum Current Source

March 31, 2020
Author(s)
Kin P. Cheung, Jason P. Campbell
Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source. Charge

X-Ray Metrology of Nanowire/ Nanosheet FETs for Advanced Technology Nodes

March 30, 2020
Author(s)
Madhulika S. Korde, Regis J. Kline, Daniel Sunday, Nick Keller, Subhadeep Kal, Cheryl Alix, Aelen Mosden, Alain C. Diebold
The three-dimensional architectures for field effect transistors (FETs) with vertical stacking of Gate-all-Around Nanowires provide a pathway to increased device density and superior electrical performance. However, the transition from research into

Targeted enrichment of 28Si thin films for quantum computing

March 9, 2020
Author(s)
Ke Tang, Hyun S. Kim, Aruna N. Ramanayaka, David S. Simons, Joshua M. Pomeroy
We report on the growth of isotopically enriched 28Si epitaxial films with precisely controlled enrichment levels, ranging from natural abundance ratio of 92.2% all the way to 99.99987 % (0.832 × 10-6 mol/mol 29Si). Isotopically enriched 28Si is regarded
Displaying 51 - 75 of 715