August 1, 2004
Author(s)
Sei-Hyung Ryu, Sumi Krishnaswami, Michael O'Loughlin, James Richmond, Anant Agarwal, John W. Palmour, Allen R. Hefner Jr.
10 kV, 123 mΩ}-cm 2 Power DMOSFETs in 4H-SiC are demonstrated. A 42% reduction in R on,sp, compared to previously reported value, was achieved by using an 8 x 1014 cm-3 doped, 85 υm thick drift epilayer. An effective channel mobility of 22 cm2/Vs was