Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

10 kV, 123 m Ω}-cm2 4H-SiC Power DMOSFETs

Published

Author(s)

Sei-Hyung Ryu, Sumi Krishnaswami, Michael O'Loughlin, James Richmond, Anant Agarwal, John W. Palmour, Allen R. Hefner Jr.

Abstract

10 kV, 123 mΩ}-cm2 Power DMOSFETs in 4H-SiC are demonstrated. A 42% reduction in Ron,sp, compared to previously reported value, was achieved by using an 8 x 1014 cm-3 doped, 85 υm thick drift epilayer. An effective channel mobility of 22 cm2/Vs was measured from a test MOSFET. A specific on-resistance of 123 mΩ}-cm2 were measured with a gate bias of 18 V, which corresponds to an Eox of 3 MV/cm. A leakage current of 197 υA was measured at a drain bias of 10 kV from a 4H-SiC DMOSFET with an active area of 4.24 x 10-3 cm2. A switching time of 100 ns was measured in 4.6 kV, 1.3 A switching measurements. This shows that the 4H-SiC power DMOSFETS are ideal for high voltage, high speed switching applications.
Citation
IEEE Electron Device Letters

Keywords

high voltage, MOSFET, power device, semiconductor, Silicon-carbide, wide-bandgap

Citation

Ryu, S. , Krishnaswami, S. , O'Loughlin, M. , Richmond, J. , Agarwal, A. , Palmour, J. and Hefner Jr., A. (2004), 10 kV, 123 m {&#937;}-cm<sup>2</sup> 4H-SiC Power DMOSFETs, IEEE Electron Device Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31865 (Accessed April 16, 2024)
Created July 31, 2004, Updated October 12, 2021