@article{847791,
  author = {Sei-Hyung Ryu and Sumi Krishnaswami and Michael O'Loughlin and James Richmond and Anant Agarwal and John Palmour and Allen Hefner Jr.},
  title = {10 kV, 123 m {&#937;}-cm<sup>2</sup> 4H-SiC Power DMOSFETs},
  year = {2004},
  month = {2004-08-01 00:08:00},
  publisher = {IEEE Electron Device Letters},
  url = {https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31865},
  language = {en},
}