An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Dylan F. Williams, Roger Marks, T H. Miers, A Cangellaris
Two anomalies have been observed in the course of developing planar wafer level standards for the testing of GaAs monolithic microwave integrated circuits. The first involves a low-frequency characteristic impedance change of microstrip and coplanar
Ronald H. Ono, Loren F. Goodrich, James A. Beall, Johannes A. Soons, Carl D. Reintsema
We have measured the transport critical current density (Jc) in epitaxial quality films of YBa2Cuj07-delta some of which were covered by thin (10 nm) Ag films. The films, both with and without Ag, had Jc values greater than 10^6 A/cm2 in liquid nitrogen
Stephen E. Russek, Brian H. Moeckly, D. K. Lathrop, R A. Buhrman, M. G. Norton, C, B. Carter
We discuss the results of a study on the growth by laser ablation of YBa2Cu3O7 thin films on polycrystalline and annealed vicinal (001) MgO substrates. In both instances the filss were found to grow predominantly with the c axis normal the the plane of the
Stephen E. Russek, Brian H. Moeckly, D. K. Lathrop, R A. Buhrman, Jian Li, J. W. Mayer
We discuss the results of a study on growth by laser ablation of YBa2CuO7 thin films on polycrystalline and annealed vicinal (001) MgO substrates. In both instances the films were found to grow predominantly with c axis normal to the plane of the substrate
We discuss the results of a study of the effect of a substrate preparation on the microstructure and superconductive properties of YBa2Cu3O7 think films formed by laser ablation on (001) MgO substrates. Thermal annealing of the substrates is found to be
This paper investigates a general method of characterizing microwave test fixtures for the purpose of determining the S parameters of devices embedded in the fixture. The accuracy of the technique was studied and compared with that of the common open-short