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Metrology

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Displaying 1926 - 1950 of 2718

2D and 3D Surface Texture Comparisons Using Autocorrelation Functions

January 1, 2005
Author(s)
Jun-Feng Song, Li Ma, Eric P. Whitenton, Theodore V. Vorburger
Autocorrelation and cross-correlation functions are proposed for 2D and 3D surface texture comparisons. At the maximum correlaton point of the two correlated surface textrues, there is a peak shown at the cross-correaltion curve. It is proposed to generate

2D and 3D Surface Texture Comparisons Using Autocorrelation Functions

January 1, 2005
Author(s)
Jun-Feng Song, Li Ma, Eric P. Whitenton, Theodore V. Vorburger
Autocorrelation and cross-correlation functions are proposed for 2D and 3D surface texture comparisons. At the maximum correlation point of the two correlated surface textures, there is a peak shown at the cross-correlation curve. It is proposed to

Internet-Based Surface Metrology Algorithm Testing System

January 1, 2005
Author(s)
Mark C. Malburg, Jayaraman Raja, Son H. Bui, Thomas Brian Renegar, Bui Son Brian, Theodore V. Vorburger
Software is an integral part of most measurement systems and it is particularly important in roughness measurement and analysis. Evaluation and assessment of measured roughness profiles must be performed in accordance with standards. Different types of

Issues in Line Edge and Linewidth Roughness Metrology

January 1, 2005
Author(s)
John S. Villarrubia
In semiconductor electronics applications, line edge and linewidth roughness are generally measured using a root mean square (RMS) metric. The true value of RMS roughness depends upon the length of edge or line that is measured and the chosen sampling

Line Edge Roughness Metrology Using Atomic Force Microscopes

January 1, 2005
Author(s)
Ndubuisi G. Orji, Theodore V. Vorburger, Joseph Fu, Ronald G. Dixson, C Nguyen, Jayaraman Raja
Line edge roughness measurements using two types of atomic force microscopes and two types of tips are compared. Measurements were made on specially prepared samples with inscribed edge roughness of different amplitudes and wavelengths. The spatial

Linewidth Measurement from a Stitched AFM Image

January 1, 2005
Author(s)
Joseph Fu, Ronald G. Dixson, Ndubuisi G. Orji, Theodore V. Vorburger, C Nguyen
Image stitching is a technique that combines two or more images to form one composite image, which provides a field of view that the originals cannot. It has been widely used in photography, medical imaging, and computer vision and graphics. For such

Measurement Uncertainty, CMMs, and Standards: Today and the Future

January 1, 2005
Author(s)
Steven D. Phillips
Over the past decade modern measurement uncertainty evaluation has evolved from an obscure art practiced at National Measurement Institutes (NMIs) to an increasingly intertwined aspect of industrial metrology. This paper examines the progression of

New Capabilities At NIST In Dimensional Metrology

January 1, 2005
Author(s)
Theodore D. Doiron, Eric S. Stanfield, Bryon S. Faust, John R. Stoup, Mary Abbott
A number of new or revised services in dimensional metrology are presented. Included are: a lower cost, high accuracy calibration for sphere diameter; reduced uncertainty in roundness calibration; a new instrument for measurement of the thermal expansion

Photomask Metrology, Photomask Fabrication Technology

January 1, 2005
Author(s)
Richard M. Silver, Andras Vladar
In this paper we will focus on the different metrology techniques used to measure features on photomasks. In view of the above discussion, we will focus on the importance of accurately measuring features and developing traceability. The metrology

Scanning Electron Microscope Dimensional Metrology using a Model-based Library

January 1, 2005
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are smaller

The Influence of Defects on the Morphology of Si (111) Etched in NHF

January 1, 2005
Author(s)
Hui Zhou, Joseph Fu, Richard M. Silver
We have implemented a kinetic Monte-Carlo (KMC) simulation to study the morphologies of Si (111) surfaces etched in NHF. Although our initial simulations reproduced the previous results from Hines, it failed to produce the morphologies observed in our

Internet-Based Surface Metrology Algorithm Testing System

December 1, 2004
Author(s)
Son H. Bui, Thomas B. Renegar, Theodore V. Vorburger, Jayaraman Raja, Mark C. Malburg
This paper presents the development of an Internet-based surface metrology algorithm testing system. The system includes peer-reviewed surface analysis tools and a surface texture specimen database for parameter evaluation and algorithm verification. The

Traceable Pico-Meter Level Step Height Metrology

December 1, 2004
Author(s)
Ndubuisi G. Orji, Ronald G. Dixson, Joseph Fu, Theodore V. Vorburger
The atomic force microscope (AFM) increasingly being used as a metrology tool in the semiconductor industry where the features measured are at the nanometer level and continue to decrease. Usually the height sensors of the AFM are calibrated using step

NNI Workshop Instrumentation and Metrology for Nanotechnology

November 1, 2004
Author(s)
Michael T. Postek, J J. Pellegrino
The NNI Interagency Workshop on Instrumentation and Metrology for Nanotechnology Grand Challenges was held on January 27-29, 2004 in Gaithersburg, Maryland, and was cosponsored by the National Institute of Standards and Technology (NIST), an agency of the
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