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Metrology

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Displaying 1801 - 1825 of 2718

TEM Calibration Methods for Critical Dimension Standards

April 5, 2007
Author(s)
Ndubuisi G. Orji, Ronald G. Dixson, B Bunday, M R. Bishop, Michael W. Cresswell, J Allgair
One of the key challenges in critical dimension (CD) metrology is finding suitable calibration standards. Over the last few years there has been some interest in using features measured with transmission electron microscope (TEM) as primary standards for

Neutron Collimation With Microchannel Plates: Calibration of Existing Technology and Near

April 1, 2007
Author(s)
A S. Tremsin, Daniel S. Hussey, David L. Jacobson, Muhammad D. Arif, Robert Gregory Downing, W B. Feller, David F. Mildner
A new type of high performance and compact neutron collimator can be manufactured from Gd- or B-doped microchannel plates (MCPs). Structures only a few mm thick have very narrow rocking curves and high out-of-angle rejection ratios, as observed previously

Application of Carbon Nanotube Probes in a Critical Dimension Atomic Force Microscope

March 1, 2007
Author(s)
B C. Park, J Choi, S J. Ahn, D H. Kim, L Joon, Ronald G. Dixson, Ndubuisi George Orji, Joseph Fu, Theodore V. Vorburger
The ever decreasing size of semiconductor features demands the advancement of critical dimension atomic force microscope (CD-AFM) technology, for which the fabrication and use of more ideal probes like carbon nanotubes (CNT) is of considerable interest

The Coming of Age of Tilt CD-SEM

March 1, 2007
Author(s)
B Bunday, J Allgair, E Solecky, C Archie, Ndubuisi George Orji
The need for 3D metrology is becoming more urgent to address critical gaps in metrology for both lithographic and etch processes. Current generation lithographic processing (ArF source, where lambda=193 nm) sometimes results in photoresist lines with re

Zero-Order Imaging of Device-Sized Overlay Targets Using Scatterfield Microscopy

March 1, 2007
Author(s)
Bryan M. Barnes, Lowell P. Howard, P Lipscomb, Richard M. Silver
Patterns of lines and trenches with nominal linewidths of 50 nm have been proposed for use as an overlay target appropriate for placement inside the patterned wafer die. The NIST Scatterfield Targets feature groupings of eight lines and/or trenches which

Accuracy in Optical Image Modeling

February 26, 2007
Author(s)
James E. Potzick, Egon Marx, M P. Davidson
Wafer exposure process simulation and optical photomask feature metrology both rely on optical image modeling for accurate results. The best way to gauge the accuracy of an imaging model is to compare the model results with an actual image. Modeling

Leakage Effects in Microwave Power Measurements

January 26, 2007
Author(s)
Ronald A. Ginley, Denis X. LeGolvan, Ann F. Monke
Because microwave power measurements are used to support almost every segment of the microwave electronics industry, the accuracy of these measurements is critical. Recently, we have several different problems that affect microwave power measurements which

A Measurement of Propagation Delay

January 16, 2007
Author(s)
Donald R. Larson, Nicholas Paulter
A measurement method and associated uncertainty analysis have been developed for the measurement of propagation or group delay in electrical transmission lines and optical fibers. The measurement method and uncertainty analysis were applied to measurements

3D Image Correction of Tilted Sample Through Coordinate Transformation

January 1, 2007
Author(s)
Wei Chu, Joseph Fu, Ronald G. Dixson, Theodore V. Vorburger
In scanned probe measurements of micrometer- or nanometer-scale lines, it is nearly impossible to maintain the sample in a perfectly level position, and even a small amount of tilt angle can contribute to the accuracy of the result of measurand such as

A Time-Resolved Kinetic Monte-Carlo Simulation Study On Si (111) Etching

January 1, 2007
Author(s)
Hui Zhou, Joseph Fu, Richard M. Silver
In this paper we have extended the Kinetic Monte-Carlo simulation method to study the etching dynamics of Si (111) surfaces in NH4F in a time-resolved basis. We have examined the step-flow dynamics of Si(111) etching using various simulation window sizes

Calibrated Overlay Wafer Standard

January 1, 2007
Author(s)
Michael T. Stocker, Richard M. Silver, Ravikiran Attota, Jay S. Jun
This document describes the physical characteristics of Standard Reference Material SRM 5000, provides guidance for its use in calibrating overlay (OL) tools, and gives information and precautions concerning its care and handling.Standard Reference

Comparison of Optical and Stylus Methods for Measurement of Rough Surfaces

January 1, 2007
Author(s)
Theodore V. Vorburger, H G. Rhee, Thomas B. Renegar, Jun-Feng Song, Xiaoyu A. Zheng
Abstract Optical methods are increasingly used for measurement of surface texture, particularly for areal measurements where the optical methods are generally faster. A new Working Group under Technical Committee (TC) 213 in the International Organization

Fundamental Limits of Optical Critical Dimension Metrology: A Simulation Study

January 1, 2007
Author(s)
Richard M. Silver, Thomas A. Germer, Ravikiran Attota, Bryan M. Barnes, B Bunday, J Allgair, Egon Marx, Jay S. Jun
This paper is a comprehensive summary and analysis of a SEMATECH funded project to study the limits of optical critical dimension scatterometry. The project was focused on two primary elements: 1) the comparison, stability, and validity of industry models
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