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A Time-Resolved Kinetic Monte-Carlo Simulation Study On Si (111) Etching

Published

Author(s)

Hui Zhou, Joseph Fu, Richard M. Silver

Abstract

In this paper we have extended the Kinetic Monte-Carlo simulation method to study the etching dynamics of Si (111) surfaces in NH4F in a time-resolved basis. We have examined the step-flow dynamics of Si(111) etching using various simulation window sizes for variety of miscut angles and miscut orientations as well as those parameters which affect the formation of etch pits. The simulation results have been compared with published experimental data to derive an absolute time scale. Using the absolute time scale, we have further investigated the evolution of the initial surface morphology under two different miscut configurations. These results have been compared with a previously published experimental study.
Citation
Journal of Physical Chemistry
Volume
111

Keywords

absolute time scale, dynamics of Si(111) surfaces, etch pits, Kinetic Monte-Carlo simulation, Si(111) etching

Citation

Zhou, H. , Fu, J. and Silver, R. (2007), A Time-Resolved Kinetic Monte-Carlo Simulation Study On Si (111) Etching, Journal of Physical Chemistry (Accessed April 20, 2024)
Created January 1, 2007, Updated February 19, 2017