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A method is presented to determine the misorientation probability distribution function in polycrystalline materials based on a known, analytical or numerical, representation of the associated orientation probability distribution function, i.e., texture
W S. Yoon, Kyung Y. Chung, James McBreen, Daniel A. Fischer, Xiao-Qing Yang
The electronic structures of Li1-xNiO2 system after electrochemically delithiated to various x values have been investigated using soft X-ray absorption spectroscopy (XAS) for oxygen K-edge and Ni LII,III-edge. By comparing the O K-edge XAS spectra of Li1
A Van de Walle, Benjamin P. Burton, Ursula R. Kattner
Because of their wide direct band-gaps, and excellent mechanical properties [1], wurtzite structure AlN (6.28 eV, [2]), GaN (3.5 eV, [3]) and InN (1.89 eV [4], 0.7 eV [5]) are widely used as components of light emitting diodes. Alloying, is used to tune
M. P. Paranthaman, V Selvamanickam, K Matsumoto, Luigia Gianna, Wei-xian Zhang, P Goyal, Winnie Wong-Ng
High Temperature Superconductor Wires and Tapes was one of the MS&T2006 symposia (October 15-19, 2006; Duke Energy Center, Cincinnati, Ohio) that covered recent advances in the area of high temperature superconductor (HTS) wires and tapes. The symposium
An analysis of chipping fracture in brittle solids is presented. Cracks are introduced into the edges of selected materials, including soda-lime glass and fine-grain ceramics, using a Vickers indenter in monotonic loading. The ensuing chip morphology is
Patrick S. Lysaght, Joseph Woicik, Brendan Foran, Joel Barnett, Gennadi Bersuker, B H. Lee
HfO2 gate dielectric thin films have been exposed to anneal processing in NH3 and N2 ambient in order to decouple the influence of N incorporation from that of the thermal cycle alone. We report on the effectiveness of NH3 processing to introduce N into
M Erdtmann, M T. Currie, Joseph Woicik, David R. Black
Dislocation glide kinetics dictate in relaxed graded buffers a fundamental opposition between the defectivity and throughput. For state-of-the-art Si-based applications, the trade-off between defect level and wafer cost (inversely related to throughput)
Sanjit Bhowmick, Juan J. Melendez-Martinez, Ilja Hermann, Yu Zhang, Brian R. Lawn
The roles of indenter material and size in the failure of brittle veneer layers in all-ceramic crown-like structures are studied. Glass veneer layers 1 mm thick bonded to alumina layers 0.5 mm thick on polycarbonate bases (representative of porcelain
T Hemraj-Benny, S Banerjee, S Sambasivan, Daniel A. Fischer, J A. Misewich, S S. Wong
We have demonstrated near-edge X-ray absorption fine structure (NEXAFS) spectroscopy as a particularly useful and effective technique for simultaneously probing the surface chemistry, surface molecular orientation, and electronic structure of carbon
Kao-Shuo Chang, Martin L. Green, John S. Suehle, Eric M. Vogel, Hao Xiong, Jason Hattrick-Simpers, Ichiro Takeuchi, O Famodu, K Ohnaka, T Chikyow, Prashant Majhi, B H. Lee, M Gardner
We have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (DVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS)