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Electronics

Semiconductors

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Displaying 1 - 25 of 1443

Elucidating the thermal properties and anomalous transport in the 18R polytype of SnSe2

May 30, 2025
Author(s)
Oluwagbemiga Ojo, Wilarachchige D. C. B. Gunatilleke, Winnie Wong-Ng, Tieyan Chang, Yu-Sheng Chen, Joshua Martin, Adam Biacchi, George Nolas
The 18R polytype of SnSe2 possesses unique structural features that can directly impact the transport properties and potential applications of interest; however, a comprehensive understanding of the intrinsic physical properties is lacking. We grew large

Lab-based multi-wavelength EUV diffractometry for critical dimension metrology

April 24, 2025
Author(s)
Bryan Barnes, Aaron Chew, Nicholas Jenkins, Yunzhe Shao, Martin Sohn, Regis Kline, Daniel Sunday, Purnima Balakrishnan, Thomas Germer, Steven Grantham, Clay Klein, Stephanie Moffitt, Eric Shirley, Henry Kapteyn, MARGARET MURNANE
Background: The industry is developing extreme-ultraviolet wavelength (EUV) techniques to measure critical dimensions (CDs) in logic fabrication. As nascent approaches are unveiled, evaluations against reference metrologies are essential to motivate

Sampling from exponential distributions in the time domain with superparamagnetic tunnel junctions

April 22, 2025
Author(s)
Temitayo Adeyeye, Sidra Gibeault, Daniel Lathrop, Matthew Daniels, Mark Stiles, Jabez McClelland, William Borders, Jason Ryan, Philippe Talatchian, Ursula Ebels, Advait Madhavan
Though exponential distributions are ubiquitous in statistical physics and related computational models, sampling them from device behavior is rarely done. The superparamagnetic tunnel junction (SMTJ), a key device in probabilistic computing, shows

Impact-Ionization-Based High-Endurance One-Transistor Bulk CMOS Cryogenic Memory

March 31, 2025
Author(s)
Pragya Shrestha, Alexander Zaslavsky, Valery Ortiz Jimenez, Jason Campbell, Curt Richter
This paper presents a high-endurance capacitorless one-transistor (1T) cryogenic memory, fabricated in a 180 nm bulk CMOS technology, with a high memory window of (107 I1/I0 sense current ratio) and prolonged retention. The memory is enabled by the

Thermal properties and ultra-low thermal conductivity of Zn2GeSe4

March 11, 2025
Author(s)
Oluwagbemiga Ojo, Wilarachchige Gunatilleke, Adam Biacchi, Hsin Wang, George Nolas
Materials-related discovery continues to drive advancements in technologically significant fields of interest. Moreover, an understanding of the thermal properties of materials is essential for any application of interest. Here, we report on the structural

High-endurance bulk CMOS one-transistor cryo-memory

February 28, 2025
Author(s)
Alexander Zaslavsky, Pragya Shrestha, Valery Ortiz Jimenez, Jason Campbell, Curt Richter
Previously we reported a compact one-transistor (1T) 180 nm bulk CMOS cryo-memory with a high 10^7 I_1/I_0 memory window and long 800 s retention time based on impact-ionization-induced charging of the transistor body. Here, we present the endurance and

On the response time constant of interface defects

January 21, 2025
Author(s)
Kin Cheung, Yu Xin Wen, Bing-Yue Tsui
Interface defect response time is a key parameter in some common electrical measurements of MOS devices, most notably the hi-lo CV measurement as well as the conductance measurement. A long established believe is that interface defects at energies close to

A 4-mW 2.2-6.9 GHz LNA in 16nm FinFET Technology for Cryogenic Applications

December 9, 2024
Author(s)
Runzhou Chen, Hamdi Mani, Phil Marsh, Richard Al Hadi, Pragya Shrestha, Jason Campbell, Christopher Chen, Hao-Yu Chen, Kosmas Galatsis, Mau-Chung Frank Chang
This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates in a wide temperature range using 16nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It

Correlation of Structure and Morphology in an Ethylene-glycol Side-chain Modified Polythiophene via Combined X-ray Scattering and Four-dimensional Scanning Transmission Electron Microscopy

October 10, 2024
Author(s)
Andrew Herzing, Lucas Flagg, Chad R. Snyder, Lee Richter, Jonathan Onorato, Christine Luscombe, Ruipeng Li
We report the results of a combined grazing incidence wide-angle X-ray scattering (GIWAXS) and four-dimensional scanning transmission microscopy (4D-STEM) analysis of the effects of thermal processing on poly(3[2-(2-methoxyethoxy)ethoxy]-methylthiophene- 2

On-chip synthesis of quasi two-dimensional semimetals from multi-layer chalcogenides

September 23, 2024
Author(s)
Jun Cai, Huairuo Zhang, Yuanqiu Tan, Zheng Sun, Rahul Tripathi, Peng Wu, Sergiy Krylyuk, Caleb Suhy, Jing Kong, Albert Davydov, Zhihong Chen, Joerg Appenzeller
Reducing the dimensions of materials from three to two, or quasi-two, provides a fertile platform for exploring emergent quantum phenomena and developing next-generation electronic devices. However, growing high-quality, ultrathin, quasi two-dimensional

On-Wafer Calibration Comparisons of Multiline TRL with Platinum and Gold Conductors

July 30, 2024
Author(s)
Tomasz Karpisz, Jacob Pawlik, Johannes Hoffmann, Sarah Evans, Christian Long, Nathan Orloff, James Booth, Angela Stelson
On-wafer calibrations are critical for measurements of embedded devices at the correct reference planes. A major challenge in on-wafer calibrations is the development of accurate calibrations that cover a frequency range from MHz to THz. Another challenge

On-Wafer Capacitor Characterization Including Uncertainty Estimates Up to 1.0 THz

July 19, 2024
Author(s)
Robert Jones, Jerome Cheron, Benjamin Jamroz, Dylan Williams, Ari Feldman, Peter Aaen, Christian Long, Nathan Orloff
In this article we extract the capacitance of shunt and series metal-insulator-metal capacitors from on-wafer S-parameter measurements in the WR1.0 waveguide band. We verify consistency of the measured devices in two different state-of-the-art terahertz

Fully integrated multifunctional sensor and open-source ASIC for flexible wearables

June 25, 2024
Author(s)
Anhang Li, Hongyi Wu, Ashbir Aviat Fadila, Chanho Kye, Arvind Balijepalli, Johan Euphrosine, Tim Ansell, Nigel Coburn, Sachin Nadig, Mehdi Saligane
The open-source hardware movement has made significant progress over the past few years. Increasingly, more individuals are engaging with and participating in the open-source chip design community - not only to design their own chips with the available

Instrument Development for Spectroscopic Ellipsometry and Diffractometry in the EUV

April 24, 2024
Author(s)
Stephanie Moffitt, Bryan Barnes, Thomas A. Germer, Steven Grantham, Eric Shirley, Martin Sohn, Daniel Sunday, Charles S. Tarrio
Semiconductor devices are noted for ever-decreasing dimensions but now are also becoming more complex. While scanning probe microscopy can still resolve the smallest features, it does not have the throughput for high-volume characterization of full wafers

Threshold and Laser Conversion in Nanostructured-Resonator Parametric Oscillators

January 10, 2024
Author(s)
Haixin Liu, Grant Brodnik, Jizhao Zang, David Carlson, Jennifer Black, Scott Papp
We explore optical parametric oscillation (OPO) in nanophotonic resonators, enabling arbitrary, nonlinear phase matching and nearly lossless control of energy conversion. Such pristine OPO laser converters are determined by nonlinear light-matter
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