NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Fully transparent GaN/InGaN LED as a position sensitive detector
Published
Author(s)
Christine McGinn, Keith Behrman, Emily Bittle, Pragya Shrestha, Qingyuan Zeng, Vikrant Kumar, Christina Hacker, Ioannis Kymissis
Abstract
Commercial imaging technologies have an increasing need for an accurate, in-situ beam locator to ensure laser alignment during operation. In this work, gallium nitride LED with indium gallium nitride quantum wells is leveraged is leveraged to create a fully transparent two-dimensional position sensitive detector (PSD). Two different architectures are developed and characterized. Fabricated devices are shown to successfully and repeatably locate 405 nm laser light in two dimensions in the PSD area with a best observed limit of detection of 8.4 microns while maintaining approximately 3 \% linearity.
McGinn, C.
, Behrman, K.
, Bittle, E.
, Shrestha, P.
, Zeng, Q.
, Kumar, V.
, Hacker, C.
and Kymissis, I.
(2025),
Fully transparent GaN/InGaN LED as a position sensitive detector, Optics Express, [online], https://doi.org/10.1364/OE.564927, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=958296
(Accessed October 14, 2025)