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PUBLICATIONS

Fully transparent GaN/InGaN LED as a position sensitive detector

Published

Author(s)

Christine McGinn, Keith Behrman, Emily Bittle, Pragya Shrestha, Qingyuan Zeng, Vikrant Kumar, Christina Hacker, Ioannis Kymissis

Abstract

Commercial imaging technologies have an increasing need for an accurate, in-situ beam locator to ensure laser alignment during operation. In this work, gallium nitride LED with indium gallium nitride quantum wells is leveraged is leveraged to create a fully transparent two-dimensional position sensitive detector (PSD). Two different architectures are developed and characterized. Fabricated devices are shown to successfully and repeatably locate 405 nm laser light in two dimensions in the PSD area with a best observed limit of detection of 8.4 microns while maintaining approximately 3 \% linearity.
Citation
Optics Express
Volume
33
Issue
17
Pub Type
Journals

Download Paper

https://doi.org/10.1364/OE.564927
Local Download
Sensors, Semiconductors and Electronics

Citation

McGinn, C. , Behrman, K. , Bittle, E. , Shrestha, P. , Zeng, Q. , Kumar, V. , Hacker, C. and Kymissis, I. (2025), Fully transparent GaN/InGaN LED as a position sensitive detector, Optics Express, [online], https://doi.org/10.1364/OE.564927, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=958296 (Accessed September 6, 2025)

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Created August 11, 2025, Updated September 2, 2025
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