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Electronics

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Displaying 76 - 100 of 690

Gate resistance thermometry: An electrical thermal characterization technique

July 15, 2022
Author(s)
Georges Pavlidis, Brian Foley, Samuel Graham
Gate Resistance Thermometry (GRT) is a potential reliable technique to determine the average temperature of the gate metal in GaN transistors. In contrast to other electrical techniques that average the temperature across different areas of the active

The Expanding Role of National Metrology Institutes in the Quantum Era

July 12, 2022
Author(s)
Alexander Tzalenchuk, Nicolas Spethmann, Tim Prior, Jay H. Hendricks, Yijie Pan, Vladimir Bubanja, Guilherme Temporao, Dai-Hyuk Yu, Damir Ilic, Barbara L. Goldstein
Now that all base units are defined in terms of fundamental constants and can thus — at least in principle — be realized anytime and anywhere, rather than through a measurement chain leading back to unique physical artefacts, who holds the traceability

A 110 GHz Comb Generator in a 250 nm InP HBT Technology

April 18, 2022
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Paul D. Hale, Rob Jones, Ari Feldman
We report a monolithic microwave integrated-circuit (MMIC) comb generator capable of producing a repetitive narrow pulse (7.1 ps pulse duration) with sharp edges (4.2 ps falling time). The circuit is designed in a 250 nm Indium Phosphide (InP)

2022 Spring/Summer ARFTG Microwave Measurement Conference

April 4, 2022
Author(s)
Jon Martens, Andrej Rumiantsev, Marco De Spirito, Jeffrey Jargon
The Automatic RF Techniques Group (ARFTG) is a technical organization interested in all aspects of RF and microwave test and measurement. Originally created as a users' forum focused on the calibration and automation of early vector network analyzers

Recent Advances in Weyl Semimetal ( MnBi2Se4) and Axion Insulator (MnBi2Te4)

March 25, 2022
Author(s)
Sugata Chowdhury, Kevin Garrity, Francesca Tavazza
Extensive research is currently focused on 2D and 3D magnetic topological insulators (MTIs), as their many novel properties make them excellent candidates for applications in spintronics and quantum computing. Practical MTIs requires a combination of

Influence of Dimensionality on the Charge Density Wave Phase of 2H-TaSe2

March 23, 2022
Author(s)
Sugata Chowdhury, Albert Rigosi, Heather Hill, David Newell, Angela Hight Walker, Francesca Tavazza, Andrew Briggs
Metallic transition metal dichalcogenides like tantalum diselenide (TaSe2) exhibit exciting behaviors at low temperatures including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is used to classify the

Are 2D Interfaces Really Flat?

March 15, 2022
Author(s)
Zhihui Cheng, Huairuo Zhang, Son Le, Hattan Abuzaid, Guoqing Li, Yifei Yu, Albert Davydov, Linyou Cao, Aaron Franklin, Curt A. Richter
Two-dimensional (2D) materials are amenable to external mechanical deformation and thus forming bubbles and wrinkles. However, little is known about the dynamics of 2D interfaces, especially their flatness under different conditions. Here we use cross

Empirical Differences in LTE Open- and Closed-Loop Power Control

February 10, 2022
Author(s)
Azizollah Kord
We present the empirical Physical Uplink Shared Channel radiated power of a User Equipment in a commercial Long-Term Evolution Frequency-Division Duplex system in open- and closed-Loop power control. We present new insights, targeted on power control, from

Intermediate spin pair relaxation through modulation of isotropic hyperfine interaction in frequency-swept spin-dependent recombination in 4H-SiC

February 7, 2022
Author(s)
James Ashton, Brian Manning, Stephen Moxim, Fedor Sharov, Patrick Lenahan, Jason Ryan
Electrically detected magnetic resonance (EDMR) measurements have been extended to sub-mT measurements through utilization of frequency sweeping of the oscillating magnetic field, where conventional electron paramagnetic resonance-based measurements

High-Gain 500-GHz InP HBT Power Amplifiers

January 31, 2022
Author(s)
Jerome Cheron, Rob Jones, Richard Chamberlin, Dylan Williams, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Peter Aaen, Ari Feldman
We report two terahertz monolithic integrated circuit (TMIC) amplifiers operating at 500 GHz. The 6-stage single-ended power amplifiers use Teledyne's 130 nm indium-phosphide double heterojunction bipolar transistors in a common-base configuration. The

Advantage of Machine Learning over Maximum Likelihood in Limited-Angle Low-Photon X-Ray Tomography

January 20, 2022
Author(s)
Zhen Guo, Jungki Song, George Barbastathis, Michael Glinsky, Courtenay Vaughan, Kurt Larson, Bradley Alpert, Zachary H. Levine
Limited-angle X-ray tomography reconstruction is an ill-posed inverse problem in general. Especially when the projection angles are limited and the measurements are taken in a photon-limited condition, reconstructions from classical algorithms such as

Circular Economy in the High-Tech World Workshop Report

December 14, 2021
Author(s)
Martin L. Green, Kelsea Schumacher
The National Institute of Standards and Technology (NIST) held a Technical Workshop on January 27 and 28, 2021 to assess the state and challenges of a Circular Economy (CE) in the High-Tech World. Scientists, researchers, and program managers in the CE

Model for the Bipolar Amplification Effect

December 10, 2021
Author(s)
James Ashton, Stephen Moxim, Ashton Purcell, Patrick Lenahan, Jason Ryan
We present a model based on Fitzgerald-Grove surface recombination for the bipolar amplification effect (BAE) measurement, which is widely utilized in electrically detected magnetic resonance (EDMR) to measure reliability and performance-limiting interface

Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook

November 30, 2021
Author(s)
Tom Vincent, Jiayun liang, simrjit singh, eli castanon, xiaotian zhang, deep jariwala, olga kazakova, zakaria al-balushi, Amber McCreary
The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as well as

Effect of Chloride on Microstructure in Cu Filled Microscale Through Silicon Vias

November 2, 2021
Author(s)
Daniel Josell, Thomas P. Moffat, Trevor Braun
The microstructure of copper filled through silicon vias deposited in a CuSO4 + H2SO4 electrolyte containing micromolar concentrations of deposition rate suppressing poloxamine and chloride additives is explored using electron backscatter diffraction

Dual current anomalies and quantum transport within extended reservoir simulations

October 19, 2021
Author(s)
Gabriela Wojtowicz, Justin E. Elenewski, Marek Rams, Michael P. Zwolak
Quantum transport simulations are rapidly evolving, including the development of well–controlled tensor network techniques for many– body transport calculations. One particularly powerful approach combines matrix product states with extended reservoirs —

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

October 14, 2021
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configuration

Performance of Reservoir Discretizations in Quantum Transport Simulations

September 29, 2021
Author(s)
Justin E. Elenewski, Gabriela Wojtowicz, Marek Rams, Michael P. Zwolak
Quantum transport simulations require a level of discretization, often achieved through an explicit representation of the electronic reservoirs. These representations should converge to the same continuum limit, though there is a trade-off between a given

Deterministic Tagging Technology for Device Authentication

September 16, 2021
Author(s)
Jungjoon Ahn, Joseph J. Kopanski, Yaw S. Obeng, Jihong Kim
This paper discusses the development of a rapid, large-scale integration of deterministic dopant placement technique for encoding information in physical structures at the nanoscale. The doped structures inherit identical and customizable radiofrequency
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