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Model for the Bipolar Amplification Effect

Published

Author(s)

James Ashton, Stephen Moxim, Ashton Purcell, Patrick Lenahan, Jason Ryan

Abstract

We present a model based on Fitzgerald-Grove surface recombination for the bipolar amplification effect (BAE) measurement, which is widely utilized in electrically detected magnetic resonance (EDMR) to measure reliability and performance-limiting interface defect structure in metal-oxidesemiconductor field-effect transistors (MOSFETs). This proof-of-concept work illustrates that quantitative BAE measurements can be made to determine interface defect densities and allows for predictions of optimal EDMR BAE biasing. Furthermore, this work also provides an initial step forward for a theory based on spin-dependent recombination measurements utilizing BAE EDMR.
Proceedings Title
Proceedings of the 2021 IEEE International Integrated Reliability Workshop, IIRW 2021
Conference Dates
October 4-28, 2021
Conference Location
Virtual, MD, US
Conference Title
2021 IEEE International Integrated Reliability Workshop

Keywords

Defect Density, Surface recombination, BAE, MOSFETs

Citation

Ashton, J. , Moxim, S. , Purcell, A. , Lenahan, P. and Ryan, J. (2021), Model for the Bipolar Amplification Effect, Proceedings of the 2021 IEEE International Integrated Reliability Workshop, IIRW 2021, Virtual, MD, US, [online], https://doi.org/10.1109/IIRW53245.2021.9635616, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=933486 (Accessed January 22, 2022)
Created December 10, 2021, Updated January 7, 2022