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Darryl A. Keenan, Holger Laabs, Shao Yang, Marla L. Dowell
To meet the semiconductor industry's demands for accurate measurements, we have developed a method to characterize the nonlinear response of 193 nm excimer
Jon R. Pratt, David B. Newell, John A. Kramar, J Mulholland, Eric P. Whitenton
The sensitivity of a piezoresistive cantilever force sensor has been determined by probing the weighing pan of the NIST prototype electrostatic force balance
Norman Sanford, Larry Robins, Albert Davydov, Alexander J. Shapiro, Denis V. Tsvetkov, Vladimir A. Dmitriev, Stacia Keller, Umesh Mishra, Steven P. DenBaars
Waveguide prism-coupling methods were used to measure the ordinary and extraordinary refractive indices of Al xGaN films grown on sapphire substrates by HVPE
John B. Schlager, Berton Callicoatt, Richard Mirin, Norman Sanford
Erbium/ytterbium co-doped planar waveguide lasers are fabricated for low-jitter mode-locked operation and single-frequency operation at 1.54 υm. The passively
Larry Robins, B. Steiner, Norman Sanford, Carmen Menoni
Low electron energy cathodoluminescence (LEECL) was used to examine polishing-induced damage in a bulk high-pressure grown GaN single-crystal platelet. The Ga
Jun-Feng Song, Theodore V. Vorburger, Robert A. Clary, Li Ma, M Ols, Eric P. Whitenton
Standard bullets and casings are currently under development to support the National Integrated Ballistics Information System (NIBIN) in the U.S. Based on a
J F. Garcia nava, Archita Hati, Craig Nelson, A Sen Gupta, F L. Walls, T Tasset
In this paper we discuss an alternate design of a self-starting conjugate regenerative divider (CRD), which uses two parallel loops instead of one series loop
Paul Bryant, Jack Grigor, Pat Harris, Brian Rich, Alan Irwin, Steve McHugh, Daniel W. King, Rodney Leonhardt
This paper discusses recent advances in the development of test and evaluation instrumentation for military laser range finder (LRF) and designation systems
Susan Y. Lehman, Kristine A. Bertness, Joseph T. Hodges
Water is a detrimental impurity even at concentrations of 10 nmol/mol or less in source gases for compound semiconductor epitaxial growth. Oxygen complexes from
M A. Sahiner, S W. Novak, Joseph Woicik, Y. Takamura, P B. Griffin, J D. Plummer
One of the important challenges in semiconductor industry is to sustain high concentration of dopant atoms electronically active in very small areas. In
M M. Maska, Jon Martens, Tracy S. Clement, Paul D. Hale, Dylan Williams
This paper discusses the typical uncertainties associated with characterizing high speed photodiodes to 65 GHz when using a vector network analyzer measurement
Partial discharge measurements have been used to characterize the response of dielectric insulation materials exposed to ac voltages. Electrode surface finish