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A general discussion of the scattering of plane monochromatic waves by dielectric wedges precedes this paper. Numerical solutions of the problem of scattering
Accurate computed optical images of lines and trenches placed on semiconductors are of great interest to the manufacturers of computer components, especially in
Archita Hati, David A. Howe, F L. Walls, D. Walker
This paper addresses two issues: (i) it compares the usefulness of phase-modulation (PM) noise measurements vs. noise figure (NF) measurements in characterizing
David T. Read, Yi-Wen Cheng, Joseph D. McColskey, R R. Keller
Here we report the results of tensile tests of thin films of Al-0.5 % Cu deposited on bare silicon. This material was on a wafer that was subjected to the
Gabrielle G. Long, T A. Dobbins, Andrew J. Allen, J Ilavsky, P Jemain, A Kulkarni, H Herman
Thermal barrier coatings (TBC) have complex void microstructures which control their in service properties. In the research reported here, ultra-small-angle X
Xuezeng Zhao, Theodore V. Vorburger, Joseph Fu, Jun-Feng Song, C Nguyen
Nano-scale linewidth measurements are performed in semiconductor manufacturing and in the data storage industry and will become increasingly important in micro
Ndubuisi G. Orji, Theodore V. Vorburger, Xiaohong Gu, Jayaraman Raja
Line edge roughness (LER) is a potential showstopper for the semiconductor industry. As the width of patterned line structures decreases, LER is becoming a non
Some of the components of the fields produced by an incident plane monochromatic wave scattered by a wedge diverge near the edge of the wedge. Rigorous
M S. Silverstein, Barry J. Bauer, V. J. Lee, R C. Hedden, B G. Landes, J L. Lyons, B Kern, J Niu, T Kalantar
Specular x-ray reflectivity and small angle neutron scattering were used to characterize changes in the porosity, pore size and pore size distribution on