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Electron Backscatter Diffraction for Studies of Localized Deformation

Published

Author(s)

R.H. Geiss, Alexana Roshko, Kristine A. Bertness, T Keller

Abstract

Electron backscatter diffraction (EBSD) was used to study localized deformation in two types of constrained-volume materials. We present a study of deformation in narrow aluminum interconnects after low frequency, AC cycling at high current density. Joule heating and differential thermal expansion caused cyclic thermal straining, resulting in thermomechanical fatigue. By quasi in-situ testing, we determined the evolution of the crystallography of all grains and boundaries in the interconnect lines. The results allowed us to formulate a mechanistic understanding of the deformation process, including slip line formation and grain growth. In a second study, we analyzed diffraction patterns from selectively oxidized, multilayered AlGaAs/GaAs structures. Elastic strains associated with the oxidation front in multilayered AlGaAs were characterized by EBSD. Pattern sharpness maps revealed the resulting strain field about the oxide growth front, which we compared with finite element simulations. Quantitative strain measurements were made comparing measurements of band widths on processed images.
Proceedings Title
Proc., 2003 TMS Annual Meeting, in Electron Microscopy: Its Role in Materials Science, eds. J.R. Weertman, M. Fine, K. Faber, W. King, and P. Liaw
Conference Dates
March 2-6, 2003
Conference Location
San Diego, CA, USA
Conference Title
The Mike Meshii Symposium

Keywords

deformation, diffraction, EBSD, electron backscatter diffraction, strain measurements

Citation

Geiss, R. , Roshko, A. , Bertness, K. and Keller, T. (2003), Electron Backscatter Diffraction for Studies of Localized Deformation, Proc., 2003 TMS Annual Meeting, in Electron Microscopy: Its Role in Materials Science, eds. J.R. Weertman, M. Fine, K. Faber, W. King, and P. Liaw, San Diego, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31485 (Accessed May 18, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created February 28, 2003, Updated October 12, 2021