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Conferences

The Characterization of Silicon-Based Molecular Devices

Author(s)
Nadine Gergel-Hackett, Christina Hacker, Lee J. Richter, Oleg A. Kirillov, Curt A. Richter
In order to realize molecular electronic (ME) technology, an intermediate integration with more traditional silicon-based technologies will likely be required

Fab-wide Network Time Synchronization - Simulation and Analysis

Author(s)
Naveen Kalappa, Vinod Anandarajah, Julien L. Baboud, Ya-Shian Li-Baboud, James Moyne
In today?s fabs, coordination of time-based information throughout the factory and enterprise has become necessary. This has driven the need to have time

Analysis of Thermocouple Behavior in Compartment Fires

Author(s)
Sung C. Kim, Anthony P. Hamins, Matthew F. Bundy, Gwon Ko, Erik L. Johnsson
The present study uses numerical simulations and analytical solutions to investigate the heat transfer processes associated with bare bead and double shield

Evaluating a Ranging Protocol For 3D Imaging Systems

Author(s)
Geraldine S. Cheok, Kamel S. Saidi, Alan M. Lytle
In 2006, the ASTM E57 committee was established to develop standards for 3D imaging systems. A 3D imaging system is a non-contact instrument that is used to

Nanowire placement with ink jet heads

Author(s)
Kristine A. Bertness, Christopher M. Dodson, Paul T. Blanchard, Norman Sanford, Ross N. Mills
We show that thermal ink jet printheads can be used to place GaN nanowires on patterned substrates. The semiconductor nanowires have diameters ranging from 70

Persistent photoconductivity studies of c-axis GaN nanowires grown by MBE

Author(s)
Norman Sanford, Paul T. Blanchard, Kristine A. Bertness, Alexana Roshko, Beau Burton, Lorelle Mansfield, John B. Schlager, Steven George, Aric Sanders
Photoconductivity (PC) and persistent photoconductivity (PPC) were measured on c-axis GaN nanowires (NWs) grown by catalyst-free nitrogen plasma assisted MBE on

Optical frequency standards based on mercury and aluminum ions

Author(s)
Wayne M. Itano, James C. Bergquist, Anders Brusch, Scott A. Diddams, Tara M. Fortier, Thomas P. Heavner, Leo W. Hollberg, David Hume, Steven R. Jefferts, Luca Lorini, Thomas E. Parker, Till P. Rosenband, Jason Stalnaker
Single-trapped-ion frequency standards based on a 282 nm transition in 199Hg+ and on a 267 nm transition in 27Al+ have been developed at NIST over the past

Biometric Systematic uncertatinty and the User

Author(s)
Mary F. Theofanos, Ross J. Micheals, Shahram Orandi, Brian C. Stanton
Often biometric technology and system evaluators are concerned with capturing accurate performance estimates that predict performance for target populations of

Lattice-based optical clock using an even isotope of Yb

Author(s)
Zeb Barber, C Hoyt, Jason Stalnaker, Nathan D. Lemke, Christopher W. Oates, Tara M. Fortier, Scott A. Diddams, Leo W. Hollberg
We describe progress toward an optical lattice clock based on an even isotope of Yb. The 1S_0 - P_0 clock resonance in 174Yb is accessed using a magnetically

Better Standards, Built Faster

Author(s)
Arthur Griesser
Many information transfer standardization efforts focus excessively on minutiae of the transport format (such as XML), to the detriment of the data model

Advances in Chip-Scale Atomic Frequency References at NIST

Author(s)
Svenja A. Knappe, V Shah, Alan Brannon, Vladislav Gerginov, Hugh Robinson, Z Popovic, Leo W. Hollberg, John E. Kitching
We present new advances in the development of chip-scale atomic frequency references. Coherent population trapping (CPT) resonances usually exhibit contrasts

Instrumentation, Metrology, and Standards for Nanomanufacturing

Author(s)
Michael T. Postek, Andras Vladar, John A. Kramar, L A. Stern, John Notte, Sean McVey
Helium Ion Microscopy (HIM) is a new, potentially disruptive technology for nanotechnology and nanomanufacturing. This methodology presents a potentially
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