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Search Publications by: Albert F. Rigosi (Fed)

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Displaying 51 - 75 of 82

A self-assembled graphene ribbon grown on SiC

January 2, 2020
Author(s)
Bi Y. Wu, Yanfei Yang, Albert Rigosi, Jiuning Hu, Hsin Y. Lee, Guangjun Cheng, Vishal Panchal, Mattias Kruskopf, Hanbyul Jin, Kenji Watanabe, Takashi Taniguchi, David B. Newell, Randolph Elmquist, Chi-Te Liang

Dielectric properties of Nb_x}W_1-x}Se_2} alloys

December 16, 2019
Author(s)
Albert Rigosi, Heather M. Hill, Sergiy Krylyuk, Nhan V. Nguyen, Angela Hight Walker, Albert Davydov, David Newell
The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work

Comparison of Multiple Methods for Obtaining PO Resistances with Low Uncertainties

September 3, 2019
Author(s)
Kwang Min Yu, Dean G. Jarrett, Albert Rigosi, Shamith Payagala, Marlin E. Kraft
Capabilities for high resistance determinations are essential for calibration of currents below 1 pA, as typically requested in several applications, including semiconductor device characterization, single electron transport, and ion beam technologies

Designing new structures in epitaxial graphene on SiC: transport and quantum effects

May 13, 2019
Author(s)
Randolph E. Elmquist, Hanbyul Jin, Mattias Kruskopf, Martina Marzano, Dinesh K. Patel, Alireza R. Panna, Albert F. Rigosi
When epitaxial graphene (EG) grows on hexagonal SiC(0001), chemical doping is produced by bonds at the epitaxial interface, or buffer layer. Robust quantum Hall effect (QHE) plateaus are observed at RK/2 = h/2e2, where RK is a constant of electrical

Utilizing confocal laser scanning microscopy for rapid optical characterization of graphene

November 20, 2018
Author(s)
Vishal Panchal, Yanfei Yang, Guangjun Cheng, Jiuning Hu, Mattias Kruskopf, Chieh-I Liu, Albert Rigosi, Christos Melios, Angela R. Hight Walker, David B. Newell, Olga Kazakova, Randolph Elmquist
Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample

Quantum transport in graphene p-n junctions with Moire superlattice modulation

July 12, 2018
Author(s)
Jiuning Hu, Albert Rigosi, Ji Ung Lee, Hsin Y. Lee, Yanfei Yang, Chieh-I Liu, Randolph Elmquist, David B. Newell
This work presents simulations of quantum transport in graphene p-n junctions (pnJs) in which Moire superlattice potentials are incorporated to demonstrate the interplay of the effect of pnJs and Moire superlattice potentials. It is shown that the

Epitaxial Graphene for High-Current QHE Resistance Standards

July 9, 2018
Author(s)
Mattias Kruskopf, Jiuning Hu, Bi Y. Wu, Yanfei Yang, Hsin Y. Lee, Albert F. Rigosi, David B. Newell, Randolph E. Elmquist
We report the growth of large-area monolayer graphene on the centimeter scale using an optimized growth process allowing for reproducibility and morphology improvements. Magneto-transport measurements on graphene quantum Hall effect devices demonstrate the

Epitaxial Graphene p-n Junctions

July 9, 2018
Author(s)
Jiuning Hu, Mattias Kruskopf, Yanfei Yang, Bi Y. Wu, Jifa Tian, Alireza R. Panna, Albert F. Rigosi, Hsin Y. Lee, George R. Jones Jr., Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexgonal boron nitride (hBN) is used as the gate dielectric. The four terminal longitudinal resistance across a single junction is well quantized at R_

Transport of NIST Graphene Quantized Hall Devices and Comparison with AIST Gallium-Arsenide Quantized Hall Devices

July 9, 2018
Author(s)
Dean G. Jarrett, Takehiko Oe, Randolph E. Elmquist, Nobu Kaneko, Albert F. Rigosi, Bi Y. Wu, Hsin Y. Lee, Yanfei Yang
We report the results of a pilot study where two graphene quantized Hall resistance (QHR) devices made at the National Institute of Standards and Technology (NIST) were hand carried from the USA to the National Institute for Advanced Industrial Science and

A Table-Top Graphene Quantized Hall Standard

July 8, 2018
Author(s)
Albert F. Rigosi, Alireza R. Panna, Shamith U. Payagala, George R. Jones Jr., Marlin E. Kraft, Mattias Kruskopf, Bi Y. Wu, Hsin Y. Lee, Yanfei Yang, Dean G. Jarrett, Randolph E. Elmquist, David B. Newell
We report the performance of a quantum standard based on epitaxial graphene maintained in a 5 T table-top cryocooler system. The ν = 2 resistance plateau, with a value of RK-90/2, is used to scale to 1 kΩ, allowing comparisons of the performance of a