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Search Publications by: Yong Sik Kim (Fed)

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Displaying 26 - 50 of 63

AFM characterization of nanopositioner in-plane stiffnesses

August 19, 2010
Author(s)
Seung Ho Yang, Yong Sik Kim, Premsagar P. Kavuri, Jae M. Yoo, Young M. Choi, Nicholas G. Dagalakis
A versatile method for measurement of in-plane stiffness of micro-elements was developed and its usefulness has been demonstrated. The in-plane stiffness of a NIST nanopositioner has been measured directly using a colloidal probe in an AFM without any

Embedded Capacitive Displacement Sensor for Nanopositioning Applications

August 17, 2010
Author(s)
Svetlana Avramov-Zamurovic1, Nicholas Dagalakis, Rae Duk Lee, Yong Sik Kim, Jae M. Yoo, Seung H. Yang
The scale of nano objects requires very precise position determination. The state-of-the-art manipulators involve accurate nanometer positioning. This paper presents the design of a capacitive displacement sensor for a nanopositioning application. The

Design of an on-chip microscale nanoassembly system

February 10, 2009
Author(s)
Jason J. Gorman, Yong Sik Kim, Andras Vladar, Nicholas G. Dagalakis
A microscale nanoassembly system has been designed for the fabrication of nanodevices and in situ electromechanical characterisation of nanostructures. This system consists of four Microelectromechanical Systems(MEMS)-based nanomanipulators positioned

Calibration of a Computer Assisted Orthopedic Hip Surgery Phantom

November 4, 2008
Author(s)
Daniel S. Sawyer, Nicholas G. Dagalakis, Craig M. Shakarji, Yong Sik Kim
Orthopedic surgeons have identified a need for calibration artifacts (phantoms) to establish the traceability (to the SI unit of length) of measurements performed with Computer Assisted Orthopedic Surgery (CAOS) systems. These phantoms must be lightweight

Scaled Born Cross Sections for Excitations of H 2 by Electron Impact

October 16, 2008
Author(s)
Yong Sik Kim
This article describes the scaling of plane-wave Born cross sections for the excitation of the H2 molecule to four low-lying electronic states (B singlet Sigma_u^+, C singlet Pi_u, B' singlet Sigma_u^+, D singlet Pi_u) by electron impact. The same BE and

Ionization of Silicon, Germanium, Tin and Lead by Electron Impact

March 30, 2007
Author(s)
Yong Sik Kim, Philip M. Stone
Cross sections for electron impact ionization of neutral atoms are important in modeling of low temperature plasmas and gases. Cross sections for ionization have been calculated for ionization from ground levels and low-lying metastable levels of Si, Ge

Control of MEMS Nanopositioners With Nano-Scale Resolution

November 10, 2006
Author(s)
Jason J. Gorman, Yong Sik Kim, Nicholas Dagalakis
Several approaches for the precision control of micro-scale positioning mechanisms, or MEMS nanopositioners, are presented along with initial experimental results which demonstrate nano-scale positioning resolution. The MEMS nanopositioners discussed in

Design of an On-Chip Micro-Scale Nanoassembly System

November 3, 2006
Author(s)
Jason J. Gorman, Yong Sik Kim, Andras Vladar, Nicholas Dagalakis
In this paper, the design and proposed operation of a MEMS-based nanoassembly system is presented. The nanoassembly system is comprised of four nanomanipulators that can work independently or cooperatively. The design of the nanomanipulators will be

Direct Observation of the 2 d3/2 - 2 d5/2 Ground State Splitting in Xe 9+

May 18, 2006
Author(s)
E Takacs, B Blagojevic, K Makonyi, E O. LeBigot, Csilla Szabo-Foster, Yong Sik Kim, John D. Gillaspy
We have used the NIST Electron Beam Ion Trap to observe a visible line at 598.30(13) nm that corresponds to the 4d9 2D3/2 - 4d9 2D5/2 magnetic dipole transition within the ground state configuration of Xe9+. We have found no evidence to support the claim

Cross Sections for K-Shell Ionization of Atoms by Electron Impact

November 1, 2003
Author(s)
J P. Santos, F Parente, Yong Sik Kim
The relativistic version of the binary-encounter-Bethe (BEB) model is used to calculate cross sections for K-shell ionization of atoms by electron impact. The BEB model requires only two atomic constants, the binding energy and kinetic energy of the K

Electron-Impact Total Ionization Cross-Sections of the Chlorofluoromethanes

January 1, 2003
Author(s)
Karl K. Irikura, M A. Ali, Yong Sik Kim
Electron-impact total ionization cross sections for CCl 3F (Freon 11), CCl 2F 2 (Freon 12), CClF 3 (Freon 13), CHCl 2F (Freon 21), CHClF 2 (Freon 22), and CH 2ClF (Freon 31) are calculated using the Binary-Encounter-Bethe (BEB) theoretical model. The BEB

Ionization of Carbon, Nitrogen, and Oxygen by Electron Impact

July 1, 2002
Author(s)
Yong Sik Kim, J P. Desclaux
Total ionization cross sections of neutral carbon, nitrogen, and oxygen atoms by electron impact are presented. In our theory we have included possibilities that (a) some target atoms used in an experiment were in metastable state close to the ground state

Electron-Impact Total Ionization Cross Sections of Hydrocarbon Ions

February 1, 2002
Author(s)
Karl K. Irikura, Yong Sik Kim, M A. Ali
The Binary-Encounter-Bethe (BEB) model for electron-impact total ionization cross sections has been applied to CH 2 +, CH 3 +, CH 4 +, C 2H 2 +, C 2H 4 +, C 2H 6 +, and H 3O +. The cross sections for the hydrocarbon ions are needed for modeling cool

Ionization of Boron, Aluminum, Gallium and Indium by Electron Impact

November 1, 2001
Author(s)
Yong Sik Kim, Philip M. Stone
Measurements of electron impact of ionization of neutral Al, Ga, and In show large cross sections compared to other elements in the same rows of the periodic table. Semi-empirical and classical calculations of direct ionization cross sections are all