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Ionization of Silicon, Germanium, Tin and Lead by Electron Impact

Published

Author(s)

Yong Sik Kim, Philip M. Stone

Abstract

Cross sections for electron impact ionization of neutral atoms are important in modeling of low temperature plasmas and gases. Cross sections for ionization have been calculated for ionization from ground levels and low-lying metastable levels of Si, Ge, Sn and Pb. We use the binary-encounter-Bethe approximation (BEB) for direct ionization and the scaled plane-wave Born approximation for excitations to autoionizing levels. Multiconfiguration Dirac-Fock wavefunctions have been used for the atomic structure. We have also employed a technique to accurately determine the range of excitation energiesof the dominantautoionizing levels. It is clear that autoionization is important in these elements and must be included to obtain accurate total ionization cross sections. The calculated ionization cross sections are in agreement with the experimental
Citation
Journal of Physics B-Atomic Molecular and Optical Physics
Volume
40

Keywords

beb, cross sections, electron impact, ionization

Citation

Kim, Y. and Stone, P. (2007), Ionization of Silicon, Germanium, Tin and Lead by Electron Impact, Journal of Physics B-Atomic Molecular and Optical Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=840871 (Accessed June 17, 2024)

Issues

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Created March 29, 2007, Updated October 12, 2021