February 27, 2009
Author(s)
Shuhui Kang, Vivek Prabhu, Wen-Li Wu, Eric K. Lin, Kwang-Woo Choi, Manish Chandhok, Todd Younkin, Wang Yueh
The photoacid diffusion length is a critical issue for EUV photoresists and photolithography because it governs critical dimension (CD), line-edge-roughness (LER) and line-width-roughness (LWR). This paper provides an approach to characterize the photoacid